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The FGH30N6S2D, FGP30N6S2D, and FGB30N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and ava-anche capability (UIS). These LGC devices shorten delay imes, and reduce the power requirement of the gate drive.
These devices are ideally suited for high voltage switched mode power supply applications where low conduction oss, fast switching times and UIS capability are essential.SMPS II LGC devices have been specially designed for:
FGP30N6S2D Maximum Ratings
Symbol
Parameter
Ratings
Units
BVCES
Collector to Emitter Breakdown Voltage
600
V
IC25
Collector Current Continuous, TC = 25°C
45
A
IC110
Collector Current Continuous, TC = 110°C
20
A
ICM
Collector Current Pulsed (Note 1)
108
A
VGES
Gate to Emitter Voltage Continuous
±20
V
VGEM
Gate to Emitter Voltage Pulsed
±30
V
SSOA
Switching Safe Operating Area at TJ = 150°C, Figure 2