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Using Novel Trench IGBT Technology, Fairchild?s new series oftrench IGBTs offer the optimum performance for PDPapplications where low conduction and switching losses areessential.
FGPF70N33BT Maximum Ratings
Product
Product status
Eco Status
Pricing*
Package type
Leads
Packing method
Package Drawing
Package Marking Convention**
FGPF70N33BTTU
Full Production
RoHS Compliant
$1.72
TO-220F
3
RAIL
Line 1:$Y (Fairchild logo) &Z (Asm. Plant Code) &E&3 (3-Digit Date Code) Line 2: FGPF70N33 Line 3: BT
* Fairchild 1,000 piece Budgetary Pricing
** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples
Package marking information for product FGPF70N33BT is available. Click here for more information .
FGPF7N60LSD General Description
Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provides very low conduction and switching losses.The device is designed for Lamp applications where very low On-Voltage Drop is a required feature.
FGPF7N60LSD Maximum Ratings
Symbol
Description
FGP90N30
Units
VCES
Collector-Emitter Voltage
600
V
VGES
Gate-Emitter Voltage
± 20
V
IC
Collector Current
@ TC = 25°C
14
A
Collector Current
@ TC = 100°C
7
A
ICM (1)
Pulsed Collector Current
21
A
IF
Diode Continous Forward Current
@ TC = 100°C
2
A
IFM
Diode Maximum Forward Current
60
A
PD
Maximum Power Dissipation
@ TC = 25°C
45
W
Maximum Power Dissipation
@ TC = 100°C
18
W
TJ
Operating Junction Temperature
-55 to +150
°C
TSTG
Storage Temperature Range
-55 to +150
°C
TL
Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds
300
°C
Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature
FGPF7N60LSD Features
• Low saturation voltage : VCE(sat) = 1.4 V @ IC = 7A • High input impedance • CO-PAK, IGBT with FRD : trr = 50 ns (typ.)