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FGPF7N60LSD

Features: • Low saturation voltage : VCE(sat) = 1.4 V @ IC = 7A• High input impedance• CO-PAK, IGBT with FRD : trr = 50 ns (typ.)ApplicationLamp applications (Hallogen Dimmer)Specifications Symbol Description FGP90N30 Units VCES Collector-Emitter Voltage 600 V VG...

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FGPF7N60LSD: Features: • Low saturation voltage : VCE(sat) = 1.4 V @ IC = 7A• High input impedance• CO-PAK, IGBT with FRD : trr = 50 ns (typ.)ApplicationLamp applications (Hallogen Dimmer)Speci...

FGPF7N60LSD Data Sheet

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Part Number:
FGPF7N60LSD
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low saturation voltage : VCE(sat) = 1.4 V @ IC = 7A
• High input impedance
• CO-PAK, IGBT with FRD : trr = 50 ns (typ.)


Application

Lamp applications (Hallogen Dimmer)


Specifications

Symbol Description FGP90N30 Units
VCES Collector-Emitter Voltage 600 V
VGES Gate-Emitter Voltage ± 20 V
IC Collector Current @ TC = 25°C 14 A
Collector Current @ TC = 100°C 7 A
ICM (1) Pulsed Collector Current 21 A
IF Diode Continous Forward Current @ TC = 100°C 2 A
IFM Diode Maximum Forward Current 60 A
PD Maximum Power Dissipation @ TC = 25°C 45 W
Maximum Power Dissipation @ TC = 100°C 18 W
TJ Operating Junction Temperature -55 to +150 °C
TSTG Storage Temperature Range -55 to +150 °C
TL Maximum Lead Temp. for soldering
Purposes, 1/8" from case for 5 seconds		 300 °C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature


Description

Fairchild's Insulated Gate Bipolar Transistors (IGBTs)FGPF7N60LSD provides very low conduction and switching losses.The device is designed for Lamp applications where very low On-Voltage Drop is a required feature.


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