BFQ67W, BFQ67W /V2, BFQ67W /V2 Selling Leads, Datasheet
MFG:Philips Package Cooled:Sot-323 D/C:09+
BFQ67W, BFQ67W /V2, BFQ67W /V2 Datasheet download
Part Number: BFQ67W
MFG: Philips
Package Cooled: Sot-323
D/C: 09+
MFG:Philips Package Cooled:Sot-323 D/C:09+
BFQ67W, BFQ67W /V2, BFQ67W /V2 Datasheet download
MFG: Philips
Package Cooled: Sot-323
D/C: 09+
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PDF/DataSheet Download
Datasheet: BFQ67W
File Size: 190320 KB
Manufacturer: VISAY [Vishay Siliconix]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BFQ131
File Size: 41891 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BFQ131
File Size: 41891 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
The BFQ67W is a type of silicon NPN plannar RF transistor with superior noise figure and associated gain performance at UHF, VHF and microwave frequencies,which can be applied to Low noise small signal amplifiers up to 2 GHz.It has three unique features: (1) small feedback capacitance; (2) low noise figure; (3) high transition frequency.
There are some absolute maximum ratings(Tamb = 25, unless otherwise specified). (1): collector-base voltage(VCBO) is 20 V; (2): collector-emitter voltage(VCEO) is 10 V; (3): emitter-base voltage(VEBO) is 2.5 V; (4): collector current(IC) is 50 mA; (5): total power dissipation(Ptot,Tamb is not higher than 60) is 200 mW; (6): junction temperature(Tj) is 150; (7): storage temperature range(Tstg) is 65 to +150.
Otherwise,there are also some electrical DC characteristics(Tamb = 25, unless otherwise specified). (1): collector cut-off current(ICES,VCE = 20 V, VBE = 0) is 100 uA max; (2): collector-base cut-off current(ICBO,VCB = 15 V, IE = 0) is 100 nA max; (3): emitter-base cut-off current(IEBO,VEB = 1 V, IC = 0) is 1 nA max; (4): collector-emitter breakdown voltage(V(BR)CEO,IC = 1 mA, IB = 0) is 10 V min; (5): collector-emitter saturation voltage(VCEsat,IC = 50 mA, IB = 5 mA) is 0.1 V typ and 0.4 V max; (6): DC forward current transfer ratio(hFE,VCE = 5 V, IC = 15 mA) is 65 min, 100 typ and 150 max.
Parameter |
Test Conditions |
Symbol |
Value |
Unit |
Collector-base voltage |
VCBO |
20 |
V | |
Collector-emitter voltage |
VCEO |
10 |
V | |
Emitter-base voltage |
VEBO |
2.5 |
V | |
Collector current |
IG |
50 |
mA | |
Total power dissipation |
Tamb 60 |
Ptot |
200 |
mW |
Junction temperature |
Tj |
150 |
||
Storage temperature range |
Tstg |
65 to +150 |
Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF and microwave frequencies.