MFG:AOS Package Cooled:TO-220 D/C:09+pbf
AOT1N60, AOT-2808-HPW-0301B, AOT-2808-HPW-0301BRW01-BIN9/BIN5 Datasheet download
MFG: AOS
Package Cooled: TO-220
D/C: 09+pbf
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PDF/DataSheet Download
Datasheet: AOT400
File Size: 471040 KB
Manufacturer: ALPHA
Download : Click here to Download
PDF/DataSheet Download
Datasheet: AOT400
File Size: 471040 KB
Manufacturer: ALPHA
Download : Click here to Download
PDF/DataSheet Download
Datasheet: AOT400
File Size: 471040 KB
Manufacturer: ALPHA
Download : Click here to Download
The AOT1N60 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
| Parameter | Symbol | Maximum | Units | |
| Drain-Source Voltage | VDS | 600 | V | |
| Gate-Source Voltage | VGS | ±30 | V | |
| Continuous Drain Current B | TC=25 | ID | 1.3 |
A |
| TC=100 | 0.8 | |||
| Pulsed Drain Current C | IDM | 4 | ||
| Avalanche Current C | IAR | 1.0 | A | |
| Repetitive avalanche energy C | EAR | 15 | mJ | |
| Single pulsed avalanche energy G | EAS | 30 | mJ | |
| Peak diode recovery dv/dt | dv/dt | 5 | V/ns | |
| Power Dissipation B | TC=25 | PD | 41.7 | W |
| Derate above 25 | 0.33 | W/ | ||
| Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds |
TL | 300 | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 to 150 | ||
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