Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3V @ 250µA
Frequency - Transition: -
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Gate Charge (Qg) @ Vgs: 72nC @ 10V
Current - Continuous Drain (Id) @ 25° C: 110A
Power - Max: 100W
Supplier Device Package: TO-220
Manufacturer: Alpha & Omega Semiconductor Inc
Rds On (Max) @ Id, Vgs: 4 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds: 4400pF @ 15V
Features: ·VDS (V) = 30V
·ID = 110A (VGS = 10V)
·RDS(ON) < 4mΩ (VGS = 10V)
·RDS(ON) < 5.5mΩ (VGS = 4.5V)Pinout
Specifications
|
Parameter |
Symbol |
Maximum |
Units |
Drain-Source Voltage
Gate-Source Voltage |
VDS
VGS |
30
±20 |
V
V |
Continuous Drain
Current G |
TA=25°CG
TA=100°CB |
ID |
110
88 |
A |
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy L=0.3mH C |
IDM
IAR
EAR |
200
30
112
|
mJ |
| Power Dissipation B |
TC=25°C
TC=100°C |
PD |
100
50 |
W |
| Junction and Storage Temperature Range |
TJ, TSTG
|
-55 to 175 |
°C |
DescriptionThe AOT424 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. This device is ideally suited for use as a low side switch in CPU core power conversion. Standard Product AOT424 is Pb-free (meets ROHS & Sony 259 specifications). AOT424L is a Green Product ordering option. AOT424 and AOT424L are electrically identical.
AOT424 Data Sheet
