MFG:AOT Package Cooled:1206 D/C:2008+
AOT-1206-3D-RGB03-S-A01, AOT123T, AOT12N50 Datasheet download
MFG: AOT
Package Cooled: 1206
D/C: 2008+
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PDF/DataSheet Download
Datasheet: AOT400
File Size: 471040 KB
Manufacturer: ALPHA
Download : Click here to Download
PDF/DataSheet Download
Datasheet: AOT400
File Size: 471040 KB
Manufacturer: ALPHA
Download : Click here to Download
PDF/DataSheet Download
Datasheet: AOT400
File Size: 471040 KB
Manufacturer: ALPHA
Download : Click here to Download
The AOT12N50 & AOTF12N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
| Parameter | Symbol | AOT12N50 | AOTF12N50 | Unit |
| Drain-Source Voltage | VDS | 500 | 500 | V |
| Gate-Source Voltage | VGS | ±30 | ±30 | V |
| Continuous Drain Current TC=25 TC=100 |
ID | 12 7.6 |
12 7.6 |
A |
| Pulsed Drain Current C | IDM | 48 | 48 | A |
| Avalanche Current C | IAR | 5.5 | 5.5 | A |
| Repetitive avalanche energy C | EAR | 454 | 454 | mJ |
| Single pulsed avalanche energy G | EAS | 908 | 908 | mJ |
| Peak diode recovery dv/dt | dv/dt | 5 | 5 | V/ns |
| Power Dissipation B TC=25 Derate above 25oC |
PD | 208 1.7 |
50 0.4 |
W/ |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -50 to 150 | -50 to 150 | |
| Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds |
TL | 300 | 300 |
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