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AOT-1206-3D-RGB03-S-A01, AOT123T, AOT12N50

Table of contents:
Info of AOT-1206-3D-RGB03-S-A01
Info of AOT123T
Info of AOT12N50

AOT-1206-3D-RGB03-S-A01, AOT123T, AOT12N50 Selling Leads, Datasheet

MFG:AOT Package Cooled:1206 D/C:2008+

AOT-1206-3D-RGB03-S-A01, AOT123T, AOT12N50 Picture

AOT-1206-3D-RGB03-S-A01, AOT123T, AOT12N50 Datasheet download

Five Points

Part Number: AOT-1206-3D-RGB03-S-A01

MFG: AOT

Package Cooled: 1206

D/C: 2008+

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AOT12N50 General Description

The AOT12N50 & AOTF12N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.

AOT12N50 Maximum Ratings

Parameter	Symbol	AOT12N50	AOTF12N50	Unit
Drain-Source Voltage	V_DS	500	500	V
Gate-Source Voltage	V_GS	±30	±30	V
Continuous Drain Current TC=25 TC=100	I_D	12 7.6	12 7.6	A
Pulsed Drain Current C	I_DM	48	48	A
Avalanche Current C	I_AR	5.5	5.5	A
Repetitive avalanche energy C	E_AR	454	454	mJ
Single pulsed avalanche energy G	EAS	908	908	mJ
Peak diode recovery dv/dt	dv/dt	5	5	V/ns
Power Dissipation B TC=25 Derate above 25oC	P_D	208 1.7	50 0.4	W/
Operating Junction and Storage Temperature Range	T_J,T_STG	-50 to 150	-50 to 150
Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds	T_L	300	300

*1 Surface Mounted on FR4 Board , t 10sec .
*2 Pulse width limited by maximum junction temperature.

AOT12N50 Features

`V_DS (V) =600V@150°C
`I_D = 12A
`R_DS(ON)< 0.52 (V_GS = 10V)

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