AOT1N60

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Gate Charge (Qg) @ Vgs: 8nC @ 10V
Drain to Source Voltage (Vdss): 600V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power - Max: 41.7W
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Current - Continuous Drain (Id) @ 25° C: 1.3A
Supplier Device Package: TO-220-3
Input Capacitance (Ciss) @ Vds: 160pF @ 25V
Manufacturer: Alpha & Omega Semiconductor Inc
Rds On (Max) @ Id, Vgs: 9 Ohm @ 650mA, 10V


Features:

V_DS (V) = 700V @ 150
I_D = 1.3A
R_DS(ON) < 9 (V_GS = 10V)


100% UIS Tested!
100% R g Tested!
Ciss , C oss , C rss Tested!




Specifications

Parameter		Symbol	Maximum	Units
Drain-Source Voltage		VDS	600	V
Gate-Source Voltage		VGS	±30	V
Continuous Drain Current B	TC=25	ID	1.3	A
	TC=100		0.8
Pulsed Drain Current C		IDM	4
Avalanche Current C		IAR	1.0	A
Repetitive avalanche energy C		EAR	15	mJ
Single pulsed avalanche energy G		EAS	30	mJ
Peak diode recovery dv/dt		dv/dt	5	V/ns
Power Dissipation B	TC=25	PD	41.7	W
	Derate above 25		0.33	W/
Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds		TL	300
Junction and Storage Temperature Range		TJ, TSTG	-55 to 150

Description

The AOT1N60 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.