AOT412

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25° C: 60A
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Gate Charge (Qg) @ Vgs: 54nC @ 10V
Supplier Device Package: TO-220-3
Power - Max: 150W
Manufacturer: Alpha & Omega Semiconductor Inc
Series: SDMOS™
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Rds On (Max) @ Id, Vgs: 15.8 mOhm @ 20A, 10V
Input Capacitance (Ciss) @ Vds: 3220pF @ 50V


Features:

V_DS (V) =100V
I_D= 60A (V_GS = 10V)
R_DS(ON) < 15.8m (V_GS = 10V)
RDS(ON) <19.4m (V_GS = 7V )
100% UIS Tested!
100% R_gTested!






Specifications

Parameter		Symbol	Maximum	Units
Drain-Source Voltage		VDS	100	V
Gate-Source Voltage		VGS	± 25	V
Continuous Drain Current	TC =25	ID	60	A
	TC=100		44
Pulsed Drain CurrentC		IDM	140
Continuous Drain Current	TA=25	IDSM	802	A
	TA=70		6.6
Avalanche CurrentC		IAR	47	A
Repetitive avalanche energy L=0.1mHC		EAR	110	mJ
Power DissipationB	T=25	PD	150	W
	TC=100		75
Power DissipationA	TA=25	PDSM	2.6	W
	TA=70		1.7
Junction and Storage Temperature Range		TJ,TSTG	-55 to 175

Thermal Characteristics
Parameter		Symbol	Typ	Max	Units
Maximum Junction-to-AmbientA	t10s	RJA	15	18	/W
Maximum Junction-to-Ambient A D	Steady-State		40	48	/W
Maximum Junction-to-Case	Steady-State	RJC	0.7	1	/W

Description

The AOT412 and AOT412L is fabricated with SDMOS_TM trench technology that combines excellent R_DS(ON)with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited orPWM, load switching and general purpose applications.
-RoHS Compliant
-AOT412L is Halogen Free