AOT12N60, AOT14N50, AOT-1608 HPW Selling Leads, Datasheet
MFG:AOS Package Cooled:TO-220 D/C:09+pbf
AOT12N60, AOT14N50, AOT-1608 HPW Datasheet download
Part Number: AOT12N60
MFG: AOS
Package Cooled: TO-220
D/C: 09+pbf
AOT12N60, AOT14N50, AOT-1608 HPW
- Table of contents:
Info of AOT12N60
Info of AOT14N50
Info of AOT-1608 HPW
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About AOT400
PDF/DataSheet Download
Datasheet: AOT400
File Size: 471040 KB
Manufacturer: ALPHA
Download : Click here to Download
About AOT400
PDF/DataSheet Download
Datasheet: AOT400
File Size: 471040 KB
Manufacturer: ALPHA
Download : Click here to Download
About AOT400
PDF/DataSheet Download
Datasheet: AOT400
File Size: 471040 KB
Manufacturer: ALPHA
Download : Click here to Download
AOT12N60 General Description
The AOT12N60 & AOTF12N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
AOT12N60 Maximum Ratings
| Item |
Symbol |
AOT12N60 |
AOTF12N60 |
Unit | |
| Drain to Source voltage |
VDS |
600 |
V | ||
| Gate to Source voltage |
VGS |
±30 |
V | ||
| Continuous Drain Current B |
TC=25 |
ID |
12 |
12* |
A |
| TC=100 |
8.1 |
8.1* | |||
| Pulsed Drain Current C |
IDM |
48 | |||
| Avalanche Current C |
IAR |
5.5 |
A | ||
| Repetitive avalanche energy C |
EAR |
450 |
mJ | ||
| Single pulsed avalanche energy G |
EAS |
900 |
mJ | ||
| Peak diode recovery dv/dt |
dv/dt |
5 |
V/ns | ||
| Power Dissipation B | TC=25 |
PD |
223 |
50 |
W |
| Derate above 25 |
1.8 |
0.4 |
W/ | ||
| Junction and Storage Temperature Range |
TJ, TSTG |
-50 to 150 |
|||
| Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds |
TL |
300 |
|||
AOT12N60 Features
VDS (V) = 700V @ 150°C
ID = 12A
RDS(ON) < 0.55 (VGS = 10V)
100% UIS Tested!
100% R g Tested!
Ciss , C oss , C rss Tested!
ID = 12A
RDS(ON) < 0.55 (VGS = 10V)
100% UIS Tested!
100% R g Tested!
Ciss , C oss , C rss Tested!
AOT14N50 General Description
The AOT14N50 & AOTF14N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
AOT14N50 Maximum Ratings
| Parameter | Symbol | AOT14N50 | AOTF14N50 | Unit |
| Drain-Source Voltage | VDS | 500 | 500 | V |
| Gate-Source Voltage | VGS | ±30 | ±30 | V |
| Continuous Drain Current TC=25 TC=100 |
ID | 14 9.6 |
14 9.6 |
A |
| Pulsed Drain Current C | IDM | 56 | 56 | A |
| Avalanche Current C | IAR | 6 | 6 | A |
| Repetitive avalanche energy L=0.1mH C | EAR | 540 | 540 | mJ |
| Single pulsed avalanche energy G | EAS | 1080 | 1080 | mJ |
| Peak diode recovery dv/dt | dv/dt | 5 | 5 | V/ns |
| Power Dissipation B TC=25 TC=100 |
PD | 223 1.8 |
50 0.4 |
W/ |
| Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds |
TL | 300 | 300 | |
| Operating Junction and Storage Temperature Range | TJ,TSTG | - 55 to 175 | - 55 to 175 |
AOT14N50 Features
`VDS (V) = 600V@150°C
`ID=14A
`RDS(ON)<0.38 (VGS = 10V)
`ID=14A
`RDS(ON)<0.38 (VGS = 10V)
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