XP162A01XXPR, XP162A11C0PR, XP162A11COPR Selling Leads, Datasheet
MFG:ATMEL Package Cooled:06+ D/C:09+
XP162A01XXPR, XP162A11C0PR, XP162A11COPR Datasheet download
Part Number: XP162A01XXPR
MFG: ATMEL
Package Cooled: 06+
D/C: 09+
XP162A01XXPR, XP162A11C0PR, XP162A11COPR
- Table of contents:
Info of XP162A01XXPR
Info of XP162A11C0PR
Info of XP162A11COPR
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About XP1001
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Datasheet: XP1001
File Size: 280364 KB
Manufacturer:
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About XP162A11C0PR
PDF/DataSheet Download
Datasheet: XP162A11C0PR
File Size: 54128 KB
Manufacturer: TOREX [Torex Semiconductor]
Download : Click here to Download
About XP1001
PDF/DataSheet Download
Datasheet: XP1001
File Size: 280364 KB
Manufacturer:
Download : Click here to Download
XP162A11C0PR General Description
The XP162A11COPR is a P-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-89 package makes high density mounting possible.
XP162A11C0PR Maximum Ratings
| PARAMETER | SYMBOL | RATINGS | UNITS |
| Drain-Source Voltage | Vdss | -30 | V |
| Gate-Source Voltage | Vgss | ±20 | V |
| Drain Current (DC) | Id | -2.5 | A |
| Drain Current (Pulse) | Idp | 10 | A |
| Reverse Drain Current | Idr | -2.5 | A |
| Continuous Channel Power Dissipation (note) |
Pd | 2 | W |
| Channel Temperature | Tch | 150 | |
| Storage Temperature | Tstg | -55~150 |
XP162A11C0PR Features
·Low on-state resistance : Rds (on) = 0.15Ω ( Vgs = -10V )
Rds (on) = 0.28Ω ( Vgs = -4.5V )
·Ultra high-speed switching
·Operational Voltage : -4.5V
·Gate protect diode built-in
·High density mounting : SOT - 89
Rds (on) = 0.28Ω ( Vgs = -4.5V )
·Ultra high-speed switching
·Operational Voltage : -4.5V
·Gate protect diode built-in
·High density mounting : SOT - 89
XP162A11C0PR Typical Application
·Notebook PCs
·Cellular and portable phones
·On - board power supplies
·Li - ion battery systems
·Cellular and portable phones
·On - board power supplies
·Li - ion battery systems
XP162A11C0PR Connection Diagram
XP162A11COPR General Description
The XP162A11COPR is a P-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
In order to counter static, a gate protect diode is built-in. The small SOT-89 package makes high density mounting possible.
XP162A11COPR Maximum Ratings
|
PARAMETER |
SYMBOL |
RATINGS |
UNITS |
|
Drain - Source Voltage Gate - Source Voltage Drain Current (DC) Drain Current (Pulse) Storage Temperature Reverse Drain Current Continuous Channel Power Dissipation (note) Channel Temperature |
Vdss Vgss Id Idp Idr Pd Tch Tstg |
-30V + 20V -2.5 -10A -2.5 2 150 -55 to 150 |
V V A A A W |
XP162A11COPR Features
`Low on-state resistance : Rds (on) = 0.15 ( Vgs = -10V ) Rds (on) = 0.28 ( Vgs = -4.5V )
`Ultra high-speed switching
`Operational Voltage : -4.5V
`Gate protect diode built-in
`High density mounting : SOT - 89
`Ultra high-speed switching
`Operational Voltage : -4.5V
`Gate protect diode built-in
`High density mounting : SOT - 89
XP162A11COPR Typical Application
·Notebook PCs
·Cellular and portable phones
·On - board power supplies
·Li - ion battery systems
·Cellular and portable phones
·On - board power supplies
·Li - ion battery systems
XP162A11COPR Connection Diagram
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