Features: Excellent Saturated Output StageBalanced Design Provides Good Output Match26.0 dB Small Signal Gain+24.0 dBm Saturated Output Power100% On-Wafer RF, DC and Output Power Testing100% Visual Inspection to MIL-STD-883Method 2010Specifications Supply Voltage (Vd) +6.0 VDC Supply Curr...
XP1005: Features: Excellent Saturated Output StageBalanced Design Provides Good Output Match26.0 dB Small Signal Gain+24.0 dBm Saturated Output Power100% On-Wafer RF, DC and Output Power Testing100% Visual ...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Supply Voltage (Vd) | +6.0 VDC |
Supply Current (Id) | 1050 mA |
Gate Bias Voltage (Vg) | +0.3 VDC |
Input Power (Pin) | +8.0 dBm |
Storage Temperature (Tstg) | -65 to +165 |
Operating Temperature (Ta) | -55 to MTTF Table3 |
Channel Temperature (Tch) | MTTF Table3 |
Mimix Broadband's four stage 35.0-43.0 GHz GaAs MMIC power amplifier XP1005 has a small signal gain of 26.0 dB with a +24.0 dBm saturated output power. The device also includes Lange couplers to achieve good output return loss. This MMIC uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The XP1005 has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. XP1005 is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.