Features: Excellent Saturated Output StageBalanced Design Provides Good Input/Output Match13.0 dB Small Signal Gain+31.0 dBm P1dB Compression Point100% On-Wafer RF, DC and Output Power Testing100% Visual Inspection to MIL-STD-883Method 2010Specifications Supply Voltage (Vd) +6.0 VDC Suppl...
XP1015-BD: Features: Excellent Saturated Output StageBalanced Design Provides Good Input/Output Match13.0 dB Small Signal Gain+31.0 dBm P1dB Compression Point100% On-Wafer RF, DC and Output Power Testing100% V...
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Supply Voltage (Vd) | +6.0 VDC |
Supply Current (Id1,2,3) | 945,945,1915 mA |
Gate Bias Voltage (Vg) | +0.3 VDC |
Input Power (Pin) | +5 dBm |
Storage Temperature (Tstg) | -65 to +165 |
Operating Temperature (Ta) | -55 to MTTF Table1 |
Channel Temperature (Tch) | MTTF Table1 |
Mimix Broadband's three stage balanced 43.5 - 46.5 GHz GaAs MMIC power amplifier XP1015-BD has a small signal gain of 13.0 dB with a +31.0 dBm P1dB output compression point. The XP1015-BD also includes Lange couplers to achieve good input and output return loss.
This MMIC XP1015-BD uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. XP1015-BD is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.