Position: Home  > All Categories> Integrated Circuits (ICs) > XP1006-FA

XP1006-FA

Features: X-Band 10W Power AmplifierFlange Package21.5 dB Large Signal Gain+40.5 dBm Saturated Output Power37% Power Added Efficiency100% On-Wafer RF, DC and Output Power TestingSpecifications Supply Voltage (Vd) +6.0 VDC Supply Current (Id) 4.5 A Gate Bias Voltage (Vg) +0.0 VDC I...

product image

XP1006-FA Picture
See larger image
SeekIC No. : 004548896 Detail

XP1006-FA: Features: X-Band 10W Power AmplifierFlange Package21.5 dB Large Signal Gain+40.5 dBm Saturated Output Power37% Power Added Efficiency100% On-Wafer RF, DC and Output Power TestingSpecifications ...

XP1006-FA Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
XP1006-FA
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/23

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

X-Band 10W Power Amplifier
Flange Package
21.5 dB Large Signal Gain
+40.5 dBm Saturated Output Power
37% Power Added Efficiency
100% On-Wafer RF, DC and Output Power Testing




Specifications

Supply Voltage (Vd) +6.0 VDC
Supply Current (Id) 4.5 A
Gate Bias Voltage (Vg) +0.0 VDC
Input Power (Pin) TBD
Storage Temperature (Tstg) -65 to +165
Operating Temperature (Ta) -55 to MTTF Table1
Channel Temperature (Tch) MTTF Table1
(1) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life.




Description

Mimix Broadband's three stage 8.5-11.0 GHz GaAs packaged power amplifier XP1006-FA has a large signal gain of 21.5 dB with a +40.5 dBm saturated output power.

This device uses Mimix XP1006-FA Broadband's 0.5 m GaAs PHEMT device model technology, and is based upon optical gate lithography to ensure high repeatability and uniformity. The device comes in a 10 pin, high frequency, LCC flange package. The package has a copper composite base material and a laminated ceramic substrate. XP1006-FA is well suited for radar applications.






Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Tapes, Adhesives
803
AC452-2
Resistors
A101G
3006P-1-205LF
Hardware, Fasteners, Accessories
MF-A02
LMS700KF07
Crystals and Oscillators
WT325BI0030.000000
2SB49
Tools
TCP202
G084SN05 V.3
Memory Cards, Modules
WT32
VTL5C7
View more