Features: ·Excellent Driver Stage·14.0 dB Small Signal Gain·+24.0 dBm P1dB Compression Point·100% On-Wafer RF, DC and Output Power Testing·100% Visual Inspection to MIL-STD-883 Method 2010Specifications Supply Voltage (Vd) +6.0 VDC Supply Current (Id) 1160 mA Gate Bias Voltage (Vg) +...
XP1016-BD: Features: ·Excellent Driver Stage·14.0 dB Small Signal Gain·+24.0 dBm P1dB Compression Point·100% On-Wafer RF, DC and Output Power Testing·100% Visual Inspection to MIL-STD-883 Method 2010Specificat...
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Supply Voltage (Vd) | +6.0 VDC |
Supply Current (Id) | 1160 mA |
Gate Bias Voltage (Vg) | +0.3 VDC |
Input Power (Pin) | +20 dBm |
Storage Temperature (Tstg) | 65 to +165 |
Operating Temperature (Ta) | -55 to MTTF Table1 |
Channel Temperature (Tch) | MTTF Table1 |
Mimix Broadband's three stage 43.5-46.5 GHz GaAs MMIC power amplifier has a small signal gain of 14.0 dB with +24.0 dBm P1dB output compression point. This MMIC XP1016-BD uses Mimix Broadband's 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. XP1016-BD is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.