XP161A1355PR, XP161A1355PRN, XP162A01B5PR Selling Leads, Datasheet
MFG:Torex Package Cooled:Sot-89 D/C:07+
XP161A1355PR, XP161A1355PRN, XP162A01B5PR Datasheet download
Part Number: XP161A1355PR
MFG: Torex
Package Cooled: Sot-89
D/C: 07+
XP161A1355PR, XP161A1355PRN, XP162A01B5PR
- Table of contents:
Info of XP161A1355PR
Info of XP161A1355PRN
Info of XP162A01B5PR
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About XP161A1355PR
PDF/DataSheet Download
Datasheet: XP161A1355PR
File Size: 169389 KB
Manufacturer: TOREX [Torex Semiconductor]
Download : Click here to Download
About XP1001
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Datasheet: XP1001
File Size: 280364 KB
Manufacturer:
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About XP162A01B5PR
PDF/DataSheet Download
Datasheet: XP162A01B5PR
File Size: 43769 KB
Manufacturer: Torex
Download : Click here to Download
XP161A1355PR General Description
The XP161A1355PR is designed as one kind of N-Channel power MOSFET with low on-state resistance and ultra high-speed switching characteristics which produced by the TOREX.Features of the XP161A1355PR are:(1)N-Channel power MOS FET;(2)DMOS structure;(3)low on-state resistance:0.05 (max);(4)ultra high-speed switching;(5)SOT-89 package;(6)gate protect diode built-in.It can be used in notebook PCs,cellular and portable phones,on-board power supplies and Li-ion battery systems.
The absolute maximum ratings of the XP161A1355PR can be summarized as:(1)drain-source voltage:20 V;(2)gate-source voltage:±8 V;(3)drain current (DC):4 A;(4)drain current (pulse):16 A;(5)reverse drain current:4 A;(6)continuous channel power dissipation (note):2 W;(7)channel temperature:150 ;(8)storage temperature:-55 to 150 ;(9)high density mounting:SOT-89;(10)operational voltage :1.5V;(11)gate protect diode built-in;(12)ultra high-speed switching;(13)low on-state resistance:Rds(on)=0.05(Vgs=4.5V),Rds(on)=0.07(Vgs=2.5V),Rds(on)=0.15 (Vgs=1.5V).If you want to know more information such as the electrical characteristics about the XP161A1355PR,please download the datasheet in www.seekic.com .
XP161A1355PR Connection Diagram
XP162A01B5PR General Description
The XP162A01B5PR is a P-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
The small SOT-89 package makes high density mounting possible.
XP162A01B5PR Maximum Ratings
|
PARAMETER |
SYMBOL |
RATINGS |
UNITS |
|
Drain-Source Voltage |
Vdss |
-20 |
V |
|
Gate-Source Voltage |
Vgss |
±12 |
V |
|
Drain Current (DC) |
Id |
-2 |
A |
|
Drain Current (Pulse) |
Idp |
-6 |
A |
|
Reverse Drain Current |
Idr |
-2 |
A |
|
Continuous Channel |
Pd |
2 |
W |
|
Channel Temperature |
Tch |
150 |
|
|
Storage Temperature |
Tstg |
-55~150 |
XP162A01B5PR Features
Low on-state resistance: Rds(on)=0.25(Vgs=-4.5V)
Rds(on)=0.4(Vgs=-2.5V)
Ultra high-speed switching
Operational Voltage: -2.5V
High density mounting: SOT-89
Rds(on)=0.4(Vgs=-2.5V)
Ultra high-speed switching
Operational Voltage: -2.5V
High density mounting: SOT-89
XP162A01B5PR Typical Application
Notebook PCs
Cellular and portable phones
On-board power supplies
Li-ion battery systems
Cellular and portable phones
On-board power supplies
Li-ion battery systems
XP162A01B5PR Connection Diagram
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