Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
·HIGH POWER P1dB=44.5dBm at 5.9GHz to 6.4GHz ·HIGH GAIN G1dB=10.0dB at 5.9GHz to 6.4GHz ·BROAD BAND INTERNALLY MATCHED FET ·HERMETICALLY SEALED PACKAGE
TIM5964-30SL Maximum Ratings
Item
SYMBOL
UNIT
RATING
Drain - source voltage
VDS
V
15
Gate - source voltage
VGS
V
-5
Drain current
IDS
A
20
Total Power dissipation
PT
W
115.4
Channel temperature
Tch
175
Storage
Tstg
-65 to +175
TIM5964-30SL Features
· LOW INTERMODULATION DISTORTION IM3=-45 dBc at Po= 34.5 dBm, Single Carrier Level · HIGH POWER P1dB=45.0 dBm at 5.9GHz to 6.4GHz · HIGH GAIN G1dB=8.0dB at 5.9GHz to 6.4GHz · BROAD BAND INTERNALLY MATCHED FET · HERMETICALLY SEALED PACKAGE
TIM5964-35SLA Maximum Ratings
CHARACTERISTICS
SYMBOL
UNIT
RATING
Drain-Source Voltage
VDS
V
15
Gate-Source Voltage
VGS
V
-5
Drain Current
IDS
A
20
Total Power Dissipation (Tc= 25 °C)
PT
W
115.4
Channel Temperature
Tch
175
Storage
Tstg
-65 to +175
TIM5964-35SLA Features
· LOW INTERMODULATION DISTORTION · HIGH GAIN IM3=-45 dBc at Po= 35.0dBm, G1dB=9.0dB at 5.9GHz to 6.4GHz Single Carrier Level · BROAD BAND INTERNALLY MATCHED FET · HIGH POWER · HERMETICALLY SEALED PACKAGE P1dB=45.5dBm at 5.9GHz to 6.4GHz