TIM1011-5L, TIM1011-8L, TIM1112-15L Selling Leads, Datasheet
MFG:Toshiba Package Cooled:Transistor D/C:07+
TIM1011-5L, TIM1011-8L, TIM1112-15L Datasheet download
Part Number: TIM1011-5L
MFG: Toshiba
Package Cooled: Transistor
D/C: 07+
TIM1011-5L, TIM1011-8L, TIM1112-15L
- Table of contents:
Info of TIM1011-5L
Info of TIM1011-8L
Info of TIM1112-15L
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About TIM0910-15L
PDF/DataSheet Download
Datasheet: TIM0910-15L
File Size: 133793 KB
Manufacturer: TOSHIBA [Toshiba Semiconductor]
Download : Click here to Download
About TIM0910-15L
PDF/DataSheet Download
Datasheet: TIM0910-15L
File Size: 133793 KB
Manufacturer: TOSHIBA [Toshiba Semiconductor]
Download : Click here to Download
About TIM1112-15L
PDF/DataSheet Download
Datasheet: TIM1112-15L
File Size: 464933 KB
Manufacturer: Toshiba Semiconductor
Download : Click here to Download
TIM1011-5L Maximum Ratings
| CHARACTERISTICS | SYMBOL | RATING | UNIT |
| Drain-Source Voltage Gate-Source Voltage |
VDS VGS |
15 -5 |
V V |
| Drain Current Total Power Dissipation (Tc= 25 ) |
IDS PT |
5.7 30 |
A W |
| Channel Temperature Storage |
Tch Tstg |
175 65 ∼ +175 |
TIM1011-5L Features
· HIGH POWER
P1dB=37.5dBm at 10.7GHz to 11.7GHz
· HIGH GAIN
G1dB=7.0dB at 10.7GHz to 11.7GHz
· BROAD BAND INTERNALLY MATCHED
· HERMETICALLY SEALED PACKAGE
P1dB=37.5dBm at 10.7GHz to 11.7GHz
· HIGH GAIN
G1dB=7.0dB at 10.7GHz to 11.7GHz
· BROAD BAND INTERNALLY MATCHED
· HERMETICALLY SEALED PACKAGE
TIM1011-8L Maximum Ratings
| CHARACTERISTICS | SYMBOL | UNIT | RATING |
| Drain-Source Voltage | VDS | V | 15 |
| Gate-Source Voltage | VGS | V | -5 |
| Drain Current | IDS | A | 10.4 |
| Total Power Dissipation (Tc= 25 °C) | PT | W | 60 |
| Channel Temperature | Tch | 175 | |
| Storage Temperature | Tstg | -65 to +175 |
TIM1011-8L Features
·LOW INTERMODULATION DISTORTIONIM3=-45 dBc at Pout= 28.0dBm Single Carrier Level
·HIGH GAING1dB=6.0 dB at 10.7 GHz to 11.7 GHz
·BROAD BAND INTERNALLY MATCHED FET
·HIGH POWER P1dB=39.5 dBm at 10.7 GHz to 11.7 GHz
·HERMETICALLY SEALED PACKAGE
·HIGH GAING1dB=6.0 dB at 10.7 GHz to 11.7 GHz
·BROAD BAND INTERNALLY MATCHED FET
·HIGH POWER P1dB=39.5 dBm at 10.7 GHz to 11.7 GHz
·HERMETICALLY SEALED PACKAGE
TIM1112-15L Maximum Ratings
| CHARACTERISTICS | SYMBOL |
UNIT |
RATING |
| Drain-Source Voltage |
VDS |
V |
15 |
| Gate-Source Voltage |
VGS |
V |
-5 |
| Drain Current |
IDS |
A |
11.5 |
| Total Power Dissipation (Tc= 25 °C) |
PT |
W |
60.0 |
| Channel Temperature |
Tch |
175 | |
| Storage |
Tstg |
-65 ~+175 |
TIM1112-15L Features
· HIGH POWER
P1dB=42.0dBm at 11.7GHz to 12.7GHz
· HIGH GAIN
G1dB=6.0dB at 11.7GHz to 12.7GHz
· BROADBANDINTERNALLYMATCHEDFET
· HERMETICALLY SEALED PACKAGE
P1dB=42.0dBm at 11.7GHz to 12.7GHz
· HIGH GAIN
G1dB=6.0dB at 11.7GHz to 12.7GHz
· BROADBANDINTERNALLYMATCHEDFET
· HERMETICALLY SEALED PACKAGE
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