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HIGH POWER P1dB=33.5dBm at 10.7GHz to 11.7GHz HIGH GAIN G1dB=7.5dB at 10.7GHz to 11.7GHz BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE
TIM1011-2L Typical Application
The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product.
TIM1011-4L Maximum Ratings
Parameter
Symbol
Rating
Unit
Drain to source voltage
VDSS
15
V
Gate to source voltage
VGSS
-5
V
Drain current
IDS
5.2
A
Total Power Dissipation (Tc= 25)
PT
42.8
W
Cannel temperature
Tch
175
Storage temperature
Tstg
-65 ~ 175
TIM1011-4L Features
·HIGH POWER P1dB=36.5dBm at 10.7GHz to 11.7GHz ·HIGH GAIN G1dB=7.5dB at 10.7GHz to 11.7GHz ·BROAD BAND INTERNALLY MATCHED FET ·HERMETICALLY SEALED PACKAGE