Features: · HIGH POWER P1dB=36.5dBm at 9.5GHz to 10.5GHz · BROAD BAND INTERNALLY MATCHED FET· HIGH GAIN G1dB=7.5dB at 9.5GHz to 10.5GHz· HERMETICALLY SEALED PACKAGESpecifications CHARACTERISTICS SYMBOL °C RATING Drain-Source Voltage VDS V 15 Gate-Sou...
TIM0910-4: Features: · HIGH POWER P1dB=36.5dBm at 9.5GHz to 10.5GHz · BROAD BAND INTERNALLY MATCHED FET· HIGH GAIN G1dB=7.5dB at 9.5GHz to 10.5GHz· HERMETICALLY SEALED PACKAGESpe...
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DescriptionThe TIM0910-15L is designed as one kind of microwave power GaAs FET device that has fou...
CHARACTERISTICS | SYMBOL | °C | RATING |
Drain-Source Voltage | VDS | V | 15 |
Gate-Source Voltage | VGS | V | -5 |
Drain Current | IDS | A | 5.2 |
Total Power Dissipation (Tc= 25 °C) | PT | W | 42.8 |
Channel Temperature | Tch | °C | 175 |
Storage Temperature | Tstg | °C | -65 to +175 |