Features: · HIGH POWER P1dB=37.5dBm at 9.5GHz to 10.5GHz· HIGH GAIN G1dB=7.0dB at 9.5GHz to 10.5GHz· BROAD BAND INTERNALLYMATCHED· HERMETICALLY SEALED PACKAGESpecifications CHARACTERISTICS SYMBOL UNIT RATING Drain-Source Voltage VDS V 15 Gate-Source Voltage VGS V...
TIM0910-5: Features: · HIGH POWER P1dB=37.5dBm at 9.5GHz to 10.5GHz· HIGH GAIN G1dB=7.0dB at 9.5GHz to 10.5GHz· BROAD BAND INTERNALLYMATCHED· HERMETICALLY SEALED PACKAGESpecifications CHARACTERISTICS S...
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DescriptionThe TIM0910-15L is designed as one kind of microwave power GaAs FET device that has fou...
CHARACTERISTICS | SYMBOL |
UNIT |
RATING |
Drain-Source Voltage |
VDS |
V |
15 |
Gate-Source Voltage |
VGS |
V |
-5 |
Drain Current |
IDS |
A |
5.7 |
Total Power Dissipation (Tc= 25 °C) |
PT |
W |
40.5 |
Channel Temperature |
Tch |
175 | |
Storage Temperature |
Tstg |
-65 to +175 |