TIM0910-15L

The TIM0910-15L is designed as one kind of microwave power GaAs FET device that has four points of features:(1)low intermodulation distortion: IM3= -45 dBc at Po = 30.0 dBm, single carrier level;(2)high power: P1db = 42.0 dBm at 9.5 GHz to 10.5 GHz;(3)high gain: G1db = 7.0 dB at 9.5 GHz to 10.5 GHz;(4)broad band internally matched;(5)hermetically sealed package.

The electrical characteristics of the TIM0910-15L can be summarized as:(1)transconductance: 3000 ms;(2)pinch-off voltage: -1.5 to -4.5 V;(3)saturated drain current: 10.0 to 11.5 A;(4)gate-source breakdown voltage: -5 V;(5)thermal resistance: 2.0 to 2.5 /W.

The RF performance speifications of the TIM0910-15L can be concluded into some points:(1)output power at 1 dB compression point: 41.0 to 42.0 dBm;(2)power gain at 1 dB compression point: 6.0 to 7.0 dB;(3)drain current: 4.5 to 5.5 A;(4)gain flatness: +/- 0.8 dB;(5)power added efficiency: 31 %;(6)3rd order intermodulation distortion: -42 to -45 dBc;(7)drain current: 4.5 to 5.5 A;(8)channel temperature rise: 100 . If you want to know more information about the TIM0910-15L, please download the datasheet in www.seekic.com or www.chinaicmart.com .