MFG:STMicroelectronics (VA) Category:Discrete Semiconductor Products Package Cooled:QFN D/C:2008+
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STL20NM20N, STL22NF10, STL27N15 Datasheet download
Category: Discrete Semiconductor Products
MFG: STMicroelectronics (VA)
Package Cooled: QFN
D/C: 2008+
Description: MOSFET N-CH 200V 20A PWRFLAT6X5
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PDF/DataSheet Download
Datasheet: STL20NM20N
File Size: 295035 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STL22NF10
File Size: 332427 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STL27N15
File Size: 135664 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
| Technical/Catalog Information | STL20NM20N |
| Vendor | STMicroelectronics (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25° C | 20A |
| Rds On (Max) @ Id, Vgs | 105 mOhm @ 10A, 10V |
| Input Capacitance (Ciss) @ Vds | 800pF @ 25V |
| Power - Max | 2.5W |
| Packaging | Digi-Reel? |
| Gate Charge (Qg) @ Vgs | 50nC @ 10V |
| Package / Case | PowerFlat? (6 x 5) |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STL20NM20N STL20NM20N 497 4657 6 ND 49746576ND 497-4657-6 |
This 200V MOSFET with a new advanced layout brings all unique advantages of MDmesh technology to lower voltages. The device exhibits worldwide lowest gate charge for any given onresistance.Its use is therefore ideal as primary switch in isolated DC-DC converters for Telecom and Computer applications.Used in combination with secondary-side low-voltage STripFETTM products,it contributes to reducing losses and boosting efficiency.The new PowerFLAT™ package allows a significant reduction in board space without compromising performance.
| Symbol | Parameter | Value | Unit |
| VDS | Drain-source Voltage (VGS = 0) | 150 | V |
| VDGR | Drain-gate Voltage (RGS = 20 k ) | 150 | V |
| VGS | Gate- source Voltage | ± 30 | V |
| ID(1) | Drain Current (continuos) at TC = 25(Steady State) Drain Current (continuos) at TC = 100 |
20 12.3 |
A A |
| IDM(3) | Drain Current (pulsed) | 80 | A |
| PTOT(2) | Total Dissipation at TC = 25(Steady State) | 2.5 | W |
| Ptot(1) | Total Dissipation at TC = 25(Steady State) | 80 | W |
| Derating Factor(2) | 0.02 | W/ | |
| dv/dt(5) | Peak Diode Recovery voltage slope | 10 | V/ns |
The MDmeshTM family is very suitable for increasing power density allowing system miniaturization and higher efficiencies
This application specific Power MOSFET is the second eneration of STMicroelectronis unique "STripFET™"technology. The resulting transistor shows extremely lowon-resistance and minimal gate charge. The newPowerFLAT™ package allows a significant reduction inboard space without compromising performance.
| Symbol | Parameter | Value | Unit |
| VDS | Drain-source Voltage (VGS = 0) | 100 | V |
| VDGR | Drain-gate Voltage (RGS = 20 k ) | 100 | V |
| VGS | Gate- source Voltage | ± 20 | V |
| ID(2) | Drain Current (continuos) at TC = 25(Steady State) |
5.3 |
A |
| ID(2) | Drain Current (continuos) at TC = 100 | 3.8 | A |
| IDM(3) | Drain Current (pulsed) | 22 | A |
| PTOT(2) | Total Dissipation at TC = 25(Steady State) | 4 | W |
| Ptot(1) | Total Dissipation at TC = 25 | 70 | W |
| Derating Factor | 0.03 | W/ | |
| dv/dt(5) | Peak Diode Recovery voltage slope | 16 | V/ns |
| EAS(6) | Single Pulse Avalanche Energy | 82 | mJ |
| Tstg | Storage Temperature | 55 to 150 | |
| Tj | Operating Junction Temperature |
This MOSFET series realized with STMicroelectronics unique "STripFET™" process has specifically been designed to minimize input capacitance and gate charge.It's therefore suitable as primary switch in advanced high efficiency, high frequency isolated DC-DC converter for telecom an computer application. The new PowerFLAT™ package allows e significant reduction in a board space without compromising performance.
| Symbol | Parameter | Value | Unit |
| VDS | Drain-source Voltage (VGS = 0) | 150 | V |
| VDGR | Drain-gate Voltage (RGS = 20 k ) | 150 | V |
| VGS | Gate- source Voltage | ± 20 | V |
| ID(2) | Drain Current (continuos) at TC = 25(Steady State) |
6 |
A |
| ID(2) | Drain Current (continuos) at TC = 100 | 4 | A |
| IDM(3) | Drain Current (pulsed) | 24 | A |
| PTOT(2) | Total Dissipation at TC = 25(Steady State) | 4 | W |
| Ptot(1) | Total Dissipation at TC = 25 | 80 | W |
| Derating Factor | 0.03 | W/ | |
| dv/dt(5) | Peak Diode Recovery voltage slope | TBD | V/ns |
| Tstg | Storage Temperature | 55 to 150 | |
| Tj | Operating Junction Temperature |
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