Transistor Polarity
: N-Channel
Mounting Style
: SMD/SMT
Packaging
: Reel
Maximum Operating Temperature
: + 150 C
Configuration
: Single Quad Drain Triple Source
Drain-Source Breakdown Voltage
: 200 V
Continuous Drain Current
: 20 A
Gate-Source Breakdown Voltage
: +/- 30 V
Resistance Drain-Source RDS (on)
: 0.105 Ohms
Package / Case
: PowerFLAT
Features: WORLDWIDE LOWEST GATE CHARGE
TYPICAL RDS(on) = 0.088
IMPROVED DIE-TO-FOOTPRINT RATIO
VERY LOW PROFILE PACKAGE (1mm MAX)
VERY LOW THERMAL RESISTANCE
LOW GATE RESISTANCE
LOW INPUT CAPACITANCE
HIGH dv/dt and AVALANCHE CAPABILITIESApplicationThe MDmeshTM family is very suitable for increasing power density allowing system miniaturization and higher efficiencies
Specifications
| Symbol |
Parameter |
Value |
Unit |
| VDS |
Drain-source Voltage (VGS = 0) |
150 |
V |
| VDGR |
Drain-gate Voltage (RGS = 20 k ) |
150 |
V |
| VGS |
Gate- source Voltage |
± 30 |
V |
| ID(1) |
Drain Current (continuos) at TC = 25(Steady State)
Drain Current (continuos) at TC = 100 |
20
12.3 |
A
A |
| IDM(3) |
Drain Current (pulsed) |
80 |
A |
| PTOT(2) |
Total Dissipation at TC = 25(Steady State) |
2.5 |
W |
| Ptot(1) |
Total Dissipation at TC = 25(Steady State) |
80 |
W |
| |
Derating Factor(2) |
0.02 |
W/ |
| dv/dt(5) |
Peak Diode Recovery voltage slope |
10 |
V/ns |
DescriptionThis 200V STL20NM20N MOSFET with a new advanced layout brings all unique advantages of MDmesh technology to lower voltages. The device exhibits worldwide lowest gate charge for any given onresistance.Its use is therefore ideal as primary switch in isolated DC-DC converters for Telecom and Computer applications.Used in combination with secondary-side low-voltage STripFETTM products,it contributes to reducing losses and boosting efficiency.The new STL20NM20N PowerFLAT™ package allows a significant reduction in board space without compromising performance.
Parameters: | Technical/Catalog Information | STL20NM20N |
| Vendor | STMicroelectronics (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25° C | 20A |
| Rds On (Max) @ Id, Vgs | 105 mOhm @ 10A, 10V |
| Input Capacitance (Ciss) @ Vds | 800pF @ 25V |
| Power - Max | 2.5W |
| Packaging | Digi-Reel? |
| Gate Charge (Qg) @ Vgs | 50nC @ 10V |
| Package / Case | PowerFlat? (6 x 5) |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STL20NM20N
STL20NM20N
497 4657 6 ND
49746576ND
497-4657-6
|
STL20NM20N Data Sheet
