STL28NF3LL

MOSFET N-Ch 30 Volt 28 Amp

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SeekIC No. : 00164523 Detail

STL28NF3LL: MOSFET N-Ch 30 Volt 28 Amp

floor Price/Ceiling Price

Part Number:
STL28NF3LL
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/22

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 16 V Continuous Drain Current : 28 A
Resistance Drain-Source RDS (on) : 0.0065 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : PowerFLAT Packaging : Reel    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 16 V
Continuous Drain Current : 28 A
Resistance Drain-Source RDS (on) : 0.0065 Ohms
Package / Case : PowerFLAT


Features:

 TYPICAL RDS(on) = 0.0055
 IMPROVED DIE-TO-FOOTPRINT RATIO
 VERY LOW PROFILE PACKAGE



Application

 DC-DC CONVERTERS


Specifications

Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 30 V
VDGR Drain-gate Voltage (RGS = 20 k ) 30 V
VGS Gate- source Voltage ± 16 V
ID(#) Drain Current (continuos) at TC = 25(Steady State)
Drain Current (continuos) at TC = 100
28
17.5
A
A
IDM() Drain Current (pulsed) 112 A
PTOT Total Dissipation at TC = 25 80 W
  Derating Factor(2) 0.64 W/
EAS (1) Single Pulse Avalanche Energy 2 J
Tstg Storage Temperature 55 to 150
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
(#) Limited by Wire Bonding
(1) Starting Tj = 25, ID = 14A, VDD = 18V



Description

This STL28NF3LL Power MOSFET is the second generation of STMicroelectronics unique "STripFET™" technology.The resulting transistor shows extremely low onresistance and minimal gate charge. The new PowerFLAT ™ package allows a significant reduction in board space without compromising performance.




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