STL100NH3LL

MOSFET STRIPFET III

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STL100NH3LL Picture
SeekIC No. : 00160631 Detail

STL100NH3LL: MOSFET STRIPFET III

floor Price/Ceiling Price

Part Number:
STL100NH3LL
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/22

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 16 V Continuous Drain Current : 100 A
Resistance Drain-Source RDS (on) : 0.0035 Ohms Configuration : Single Triple Source
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : PowerFLAT Packaging : Reel    

Description

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 100 A
Configuration : Single Triple Source
Gate-Source Breakdown Voltage : +/- 16 V
Package / Case : PowerFLAT
Resistance Drain-Source RDS (on) : 0.0035 Ohms


Features:

 `TYPICAL R DS(on) = 0.0032 @ 10V
 `IMPROVED DIE-TO-FOOTPRINT RATIO
 `VERY LOW PROFILE PACKAGE (1mm MAX)
 `VERY LOW THERMAL RESISTANCE
 `CONDUCTION LOSSES REDUCED
 `SWITCHING LOSSES REDUCED



Application

 ·HIGH-EFFICIENCY DC-DC CONVERTERS
 ·SYNCHRONOUS RECTIFICATION



Specifications

Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
30
V
VGS
Gate- source Voltage
±16
V
I D (2)
Drain Current (continuous) at TC = 25°C
100
A
ID
Drain Current (continuous) at TC = 100°C
15.6
A
I DM (3)
Drain Current (pulsed)
100
A
I D (1)
Drain Current (continuous) at TC = 25°C
25
A
P TOT (2)
Total Dissipation at TC = 25°C
80
W
P TOT (1)
Total Dissipation at TC = 25°C
4
W
Derating Factor
0.03
W/°C
T stg
Tj
Storage TemperatureOperating Junction Temperature Range
-55 to 150
°C

DiodeNote:(1)The value is according R thj-pcb (2)The value is according R thj-c(3) Pulse width limited by safe operating area.(4) When mounted on FR-4 board of 1 in2 , 2oz Cu, t < 10 sec(5) Pulsed: Pulse duration = 300s, duty cycle  .5%




Description

The STL100NH3LL utilizes the latest advanced design rules of ST's proprietary STripFET™ Technology. This process complete to unique metallization technique realised the most advanced low voltage MOSFET in PowerFLAT(6x5). The Chip-scaled PowerFLAT™ package allows a significant board space saving, still boosting the performance.




Parameters:

Technical/Catalog InformationSTL100NH3LL
VendorSTMicroelectronics (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C100A
Rds On (Max) @ Id, Vgs3.5 mOhm @ 12.5A, 10V
Input Capacitance (Ciss) @ Vds 4450pF @ 25V
Power - Max4W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs40nC @ 4.5V
Package / CasePowerFlat? (6 x 5)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STL100NH3LL
STL100NH3LL
497 5813 6 ND
49758136ND
497-5813-6



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