MFG:STMicroelectronics (VA) Category:Discrete Semiconductor Products Package Cooled:BGA D/C:08+
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STL025T, STL10, STL100NH3LL Datasheet download
Category: Discrete Semiconductor Products
MFG: STMicroelectronics (VA)
Package Cooled: BGA
D/C: 08+
Description: MOSFET N-CH 30V 100A PWRFLAT6X5
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PDF/DataSheet Download
Datasheet: STL100NH3LL
File Size: 493880 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STL100NH3LL
File Size: 493880 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STL100NH3LL
File Size: 493880 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
| Technical/Catalog Information | STL100NH3LL |
| Vendor | STMicroelectronics (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 100A |
| Rds On (Max) @ Id, Vgs | 3.5 mOhm @ 12.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 4450pF @ 25V |
| Power - Max | 4W |
| Packaging | Digi-Reel? |
| Gate Charge (Qg) @ Vgs | 40nC @ 4.5V |
| Package / Case | PowerFlat? (6 x 5) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STL100NH3LL STL100NH3LL 497 5813 6 ND 49758136ND 497-5813-6 |
The STL100NH3LL utilizes the latest advanced design rules of ST's proprietary STripFET™ Technology. This process complete to unique metallization technique realised the most advanced low voltage MOSFET in PowerFLAT(6x5). The Chip-scaled PowerFLAT™ package allows a significant board space saving, still boosting the performance.
|
Symbol |
Parameter |
Value |
Unit |
|
VDS |
Drain-source Voltage (VGS = 0) |
30 |
V |
|
VGS |
Gate- source Voltage |
±16 |
V |
|
I D (2) |
Drain Current (continuous) at TC = 25°C |
100 |
A |
|
ID |
Drain Current (continuous) at TC = 100°C |
15.6 |
A |
|
I DM (3) |
Drain Current (pulsed) |
100 |
A |
|
I D (1) |
Drain Current (continuous) at TC = 25°C |
25 |
A |
|
P TOT (2) |
Total Dissipation at TC = 25°C |
80 |
W |
|
P TOT (1) |
Total Dissipation at TC = 25°C |
4 |
W |
|
Derating Factor |
0.03 |
W/°C | |
|
T stg Tj |
Storage TemperatureOperating Junction Temperature Range |
-55 to 150 |
°C |
DiodeNote:(1)The value is according R thj-pcb (2)The value is according R thj-c(3) Pulse width limited by safe operating area.(4) When mounted on FR-4 board of 1 in2 , 2oz Cu, t < 10 sec(5) Pulsed: Pulse duration = 300s, duty cycle .5%
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