STH18NB40, STH18NB40FI, STH-24R-2 Selling Leads, Datasheet
MFG:ST Package Cooled:9800 D/C:TO
STH18NB40, STH18NB40FI, STH-24R-2 Datasheet download
Part Number: STH18NB40
MFG: ST
Package Cooled: 9800
D/C: TO
MFG:ST Package Cooled:9800 D/C:TO
STH18NB40, STH18NB40FI, STH-24R-2 Datasheet download
MFG: ST
Package Cooled: 9800
D/C: TO
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PDF/DataSheet Download
Datasheet: STH18NB40
File Size: 145670 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STH18NB40FI
File Size: 145670 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STH02F-SERIES
File Size: 212443 KB
Manufacturer:
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Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETswithoutstanding performances. The new patent pending strip layout coupled with the Company's proprieraty edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
Symbol |
Parameter |
Value |
Unit | |
STW18NB40 |
STH18NB40FI | |||
VDS |
Drain-source Voltage (VGS = 0) |
400 |
V | |
VDGR |
Drain-gate Voltage (RGS = 20 kW) |
400 |
V | |
VGS |
Gate- source Voltage |
±30 |
V | |
ID |
Drain Current (continuos) at TC = 25°C |
18.4 |
12.4 |
A |
ID |
Drain Current (continuos) at TC = 100°C |
11.6 |
7.8 |
A |
IDM () |
Drain Current (pulsed) |
73.6 |
73.6 |
A |
PTOT |
Total Dissipation at TC = 25°C |
190 |
80 |
W |
Derating Factor |
1.52 |
0.64 |
W/°C | |
dv/dt(1) |
Peak Diode Recovery voltage slope |
4.5 |
4.5 |
V/ns |
VISO |
Insulation Withstand Voltage (DC) |
- |
2000 |
V |
Tstg |
Storage Temperature |
65 to 150 |
°C | |
Tj |
Max. Operating Junction Temperature |
150 |
°C |
HIGH CURRENT, HIGH SPEED SWITCHING
SWITH MODE POWER SUPPLIES (SMPS)
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