STH10NA50FI, STH10NC60, STH10NC60FI Selling Leads, Datasheet
MFG:ST Package Cooled:9800 D/C:TO
STH10NA50FI, STH10NC60, STH10NC60FI Datasheet download
Part Number: STH10NA50FI
MFG: ST
Package Cooled: 9800
D/C: TO
MFG:ST Package Cooled:9800 D/C:TO
STH10NA50FI, STH10NC60, STH10NC60FI Datasheet download
MFG: ST
Package Cooled: 9800
D/C: TO
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PDF/DataSheet Download
Datasheet: STH10NA50FI
File Size: 248884 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STH10NC60
File Size: 345636 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STH10NC60FI
File Size: 345636 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.
Symbol |
Parameter |
Value |
Unit | |
STW10NC60 |
STH10NC60FI | |||
VDS |
Drain-source Voltage (VGS = 0) |
600 |
V | |
VDGR |
Drain-gate Voltage (RGS = 20 kW) |
600 |
V | |
VGS |
Gate- source Voltage |
±30 |
V | |
ID |
Drain Current (continuos) at TC = 25°C |
10 |
10 (*) |
A |
ID |
Drain Current (continuos) at TC = 100°C |
6.3 |
6.3 (*) |
A |
IDM 1) |
Drain Current (pulsed) |
40 |
40 (*) |
A |
PTOT |
Total Dissipation at TC = 25°C |
160 |
60 |
W |
Derating Factor |
1.28 |
0.48 |
W/°C | |
dv/dt (1) |
Peak Diode Recovery voltage slope |
3.5 |
V/ns | |
VISO |
Insulation Withstand Voltage (DC) |
- 4000 |
V | |
Tstg |
Storage Temperature |
55 to 150 |
°C | |
Tj |
Max. Operating Junction Temperature |
150 |
°C |