STH13NB60FI, STH14N50, STH14N50FI Selling Leads, Datasheet
MFG:ST Package Cooled:09+ D/C:00(og stok))
STH13NB60FI, STH14N50, STH14N50FI Datasheet download
Part Number: STH13NB60FI
MFG: ST
Package Cooled: 09+
D/C: 00(og stok))
MFG:ST Package Cooled:09+ D/C:00(og stok))
STH13NB60FI, STH14N50, STH14N50FI Datasheet download
MFG: ST
Package Cooled: 09+
D/C: 00(og stok))
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Datasheet: STH13NB60FI
File Size: 114231 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STH14N50
File Size: 342693 KB
Manufacturer:
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STH14N50FI
File Size: 342693 KB
Manufacturer:
Download : Click here to Download
Using the latest high voltage MESH OVERLAY] process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
Symbol |
Parameter |
Value |
Unit | |
STW13NB60 |
STH13NB60FP | |||
VDS |
Drain-source Voltage (VGS = 0) |
600 |
V | |
VDGR |
Drain-gate Voltage (RGS = 20 kW) |
600 |
V | |
VGS |
Gate- source Voltage |
±30 |
V | |
ID |
Drain Current (continuos) at TC = 25°C |
13 |
8.6 |
A |
ID |
Drain Current (continuos) at TC = 100°C |
8.2 |
5.4 |
A |
IDM () |
Drain Current (pulsed) |
52 |
52 |
A |
PTOT |
Total Dissipation at TC = 25°C |
190 |
80 |
W |
Derating Factor |
1.52 |
0.64 |
W/°C | |
dv/dt (1) |
Peak Diode Recovery voltage slope |
4 |
4 |
V/ns |
VISO |
Insulation Withstand Voltage (DC) |
- |
2000 |
V |
Tstg |
Storage Temperature |
65 to 150 |
°C | |
Tj |
Max. Operating Junction Temperature |
150 |
°C |
HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLIES(SMPS)
DC-AC CONVERTERS FOR WELDING EQUIPMENTAND
UNINTERRUPTIBLE POWERSUPPLIES AND MOTOR DRIVE