STH15NB50FI, STH18NB40F1, STH-19SM Selling Leads, Datasheet
MFG:ST Package Cooled:TO-247
STH15NB50FI, STH18NB40F1, STH-19SM Datasheet download
Part Number: STH15NB50FI
MFG: ST
Package Cooled: TO-247
D/C:
MFG:ST Package Cooled:TO-247
STH15NB50FI, STH18NB40F1, STH-19SM Datasheet download
MFG: ST
Package Cooled: TO-247
D/C:
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Datasheet: STH15NB50FI
File Size: 113021 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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PDF/DataSheet Download
Datasheet: STH02F-SERIES
File Size: 212443 KB
Manufacturer:
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STH02F-SERIES
File Size: 212443 KB
Manufacturer:
Download : Click here to Download
Using the latest high voltage MESH OVERLAY] process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
Symbol |
Parameter |
Value |
Unit | |
STW15NB50 |
STH15NB50FI | |||
VDS |
Drain-source Voltage (VGS = 0) |
500 |
V | |
VDGR |
Drain-gate Voltage (RGS = 20 kW) |
500 |
V | |
VGS |
Gate- source Voltage |
±30 |
V | |
ID |
Drain Current (continuos) at TC = 25°C |
14.6 |
10.5 |
A |
ID |
Drain Current (continuos) at TC = 100°C |
9.2 |
6.6 |
A |
IDM () |
Drain Current (pulsed) |
58.4 |
58.4 |
A |
PTOT |
Total Dissipation at TC = 25°C |
190 |
80 |
W |
Derating Factor |
0.64 |
1.52 |
W/°C | |
dv/dt (1) |
Peak Diode Recovery voltage slope |
4 |
V/ns | |
VISO |
Insulation Withstand Voltage (DC) |
4000 |
V | |
Tstg |
Storage Temperature |
65 to 150 |
°C | |
Tj |
Max. Operating Junction Temperature |
150 |
°C |