STH15NB50FI

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Drain to Source Voltage (Vdss): 500V
Packaging: Tube
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25° C: 10.5A
Gate Charge (Qg) @ Vgs: 80nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Input Capacitance (Ciss) @ Vds: 3400pF @ 25V
Power - Max: 80W
Manufacturer: STMicroelectronics
Series: PowerMESH™
Rds On (Max) @ Id, Vgs: 360 mOhm @ 7.5A, 10V
Package / Case: ISOWATT-218-3
Supplier Device Package: ISOWATT-218


Features:

HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDING EQUIPMENTAND
   UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE


Specifications

Symbol	Parameter	Value		Unit
		STW15NB50	STH15NB50FI
VDS	Drain-source Voltage (VGS = 0)	500		V
VDGR	Drain-gate Voltage (RGS = 20 kW)	500		V
VGS	Gate- source Voltage	±30		V
ID	Drain Current (continuos) at TC = 25°C	14.6	10.5	A
ID	Drain Current (continuos) at TC = 100°C	9.2	6.6	A
IDM ()	Drain Current (pulsed)	58.4	58.4	A
PTOT	Total Dissipation at TC = 25°C	190	80	W
	Derating Factor	0.64	1.52	W/°C
dv/dt (1)	Peak Diode Recovery voltage slope	4		V/ns
VISO	Insulation Withstand Voltage (DC)	4000		V
Tstg	Storage Temperature	65 to 150		°C
Tj	Max. Operating Junction Temperature	150		°C

Description

Using the latest high voltage MESH OVERLAY] process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.