SSF17N60A, SSF22N50A, SSF25N40A Selling Leads, Datasheet
MFG:FAIRCHILD Package Cooled:TO-247 D/C:dc00
SSF17N60A, SSF22N50A, SSF25N40A Datasheet download
Part Number: SSF17N60A
MFG: FAIRCHILD
Package Cooled: TO-247
D/C: dc00
SSF17N60A, SSF22N50A, SSF25N40A
- Table of contents:
Info of SSF17N60A
Info of SSF22N50A
Info of SSF25N40A
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About SSF17N60A
PDF/DataSheet Download
Datasheet: SSF17N60A
File Size: 277006 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About SSF10N60A
PDF/DataSheet Download
Datasheet: SSF10N60A
File Size: 262714 KB
Manufacturer: Fairchild Semiconductor
Download : Click here to Download
About SSF25N40A
PDF/DataSheet Download
Datasheet: SSF25N40A
File Size: 263082 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
SSF17N60A Maximum Ratings
| Symbol | Parameter | Value | Units |
| VDSS | Drain-Source Voltage | 600 | V |
| ID | Continuous Drain Current (TC=25 °C) |
9 | A |
| Continuous Drain Current (TC=100°C ) |
5.7 | ||
| IDM | Drain Current - Pulsed | 68 | A |
| VGS | Gate-Source Voltage | ± 30 | V |
| EAS | Single Pulsed Avalanche Energy | 884 | mJ |
| IAR | Avalanche Current | 9 | A |
| EAR | Repetitive Avalanche Energy | 10 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 3.0 | V/ns |
| PD | Total Power Dissipation (TC=25 °C) Linear Derating Factor |
100 | W |
| 0.8 | W/°C | ||
| TJ, TSTG | Operating Junction and Storage Temperature Range |
-55 to +150 | °C |
| TL | Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds |
300 | °C |
SSF17N60A Features
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25 A (Max.) @ VDS = 600V
Lower RDS(ON) : 0.356 (Typ.)
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25 A (Max.) @ VDS = 600V
Lower RDS(ON) : 0.356 (Typ.)
SSF25N40A Maximum Ratings
| Symbol | Parameter | Value | Units |
| VDSS | Drain-Source Voltage | 400 | V |
| ID | Continuous Drain Current (TC=25°C ) |
14.3 | A |
| Continuous Drain Current (TC=100°C ) |
9.1 | ||
| IDM | Drain Current - Pulsed | 100 | A |
| VGS | Gate-Source Voltage | ± 30 | V |
| EAS | Single Pulsed Avalanche Energy | 1753 | mJ |
| IAR | Avalanche Current | 14.3 | A |
| EAR | Repetitive Avalanche Energy | 10 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 4.0 | V/ns |
| PD | Total Power Dissipation (TC=25 °C) Linear Derating Factor |
100 | W |
| 0.8 | W/°C | ||
| TJ, TSTG | Operating Junction and Storage Temperature Range |
-55 to +150 | °C |
| TL | Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds |
300 | °C |
SSF25N40A Features
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 A (Max.) @ VDS = 400V
Low R DS(ON) : 0.162 (Typ.)
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 A (Max.) @ VDS = 400V
Low R DS(ON) : 0.162 (Typ.)
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