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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 400 V |
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 14.3 A |
Resistance Drain-Source RDS (on) : | 0.2 Ohms | Configuration : | Single |
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole |
Package / Case : | TO-3PF |
Symbol | Parameter | Value | Units |
VDSS | Drain-Source Voltage | 400 | V |
ID | Continuous Drain Current (TC=25°C ) |
14.3 | A |
Continuous Drain Current (TC=100°C ) |
9.1 | ||
IDM | Drain Current - Pulsed | 100 | A |
VGS | Gate-Source Voltage | ± 30 | V |
EAS | Single Pulsed Avalanche Energy | 1753 | mJ |
IAR | Avalanche Current | 14.3 | A |
EAR | Repetitive Avalanche Energy | 10 | mJ |
dv/dt | Peak Diode Recovery dv/dt | 4.0 | V/ns |
PD | Total Power Dissipation (TC=25 °C) Linear Derating Factor |
100 | W |
0.8 | W/°C | ||
TJ, TSTG | Operating Junction and Storage Temperature Range |
-55 to +150 | °C |
TL | Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds |
300 | °C |