MFG:SST Package Cooled:PLCC32 D/C:9933
SSF39VF020-90-4C-NH, SSF45N20B, SSF45N20B-FP001 Datasheet download
MFG: SST
Package Cooled: PLCC32
D/C: 9933
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PDF/DataSheet Download
Datasheet: SSF10N60A
File Size: 262714 KB
Manufacturer: Fairchild Semiconductor
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SSF45N20B
File Size: 691105 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SSF10N60A
File Size: 262714 KB
Manufacturer: Fairchild Semiconductor
Download : Click here to Download
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.
| Symbol | Parameter | SSF45N20B | Units |
| VDSS | Drain-Source Voltage | 200 | V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
26.4 | A |
| 16.7 | A | ||
| IDM | Drain Current - Pulsed (Note 1) | 106 | A |
| VGSS | Gate-Source Voltage | ± 30 | V |
| EAS | Single Pulsed Avalanche Energy (Note 2) | 650 | mJ |
| IAR | Avalanche Current (Note 1) | 26.4 | A |
| EAR | Repetitive Avalanche Energy (Note 1) | 10 | mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | 5.5 | V/ns |
| PD | Power Dissipation (TC = 25°C) - Derate above 25°C |
100 | W |
| 0.8 | W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range | -55 to +150 | °C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 | °C |
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