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SSF17N60A

MOSFET N-CH/600V/9A/0.45OHM

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SeekIC No. : 00162801 Detail

SSF17N60A: MOSFET N-CH/600V/9A/0.45OHM

SSF17N60A Data Sheet

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Part Number:
SSF17N60A
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/22

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 9 A
Resistance Drain-Source RDS (on) : 0.45 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-3PF Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Continuous Drain Current : 9 A
Package / Case : TO-3PF
Resistance Drain-Source RDS (on) : 0.45 Ohms


Features:

Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25 A (Max.) @ VDS = 600V
Lower RDS(ON) : 0.356 (Typ.)



Specifications

Symbol Parameter Value Units
VDSS Drain-Source Voltage 600 V
ID Continuous Drain Current (TC=25 °C)
 9 A
Continuous Drain Current (TC=100°C )
 5.7
IDM Drain Current - Pulsed 68 A
VGS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy 884 mJ
IAR Avalanche Current 9 A
EAR Repetitive Avalanche Energy 10 mJ
dv/dt Peak Diode Recovery dv/dt 3.0 V/ns
PD Total Power Dissipation (TC=25 °C)
Linear Derating Factor
 100 W
0.8 W/°C
TJ, TSTG Operating Junction and
Storage Temperature Range		 -55 to +150 °C
TL Maximum Lead Temp. for Soldering
Purposes, 1/8" from case for 5-seconds		 300 °C



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