SSF3316-1R0M, SSF45N20A, SSF4N80A Selling Leads, Datasheet
MFG:TO-3P Package Cooled:TO-247 D/C:/
SSF3316-1R0M, SSF45N20A, SSF4N80A Datasheet download
Part Number: SSF3316-1R0M
MFG: TO-3P
Package Cooled: TO-247
D/C: /
SSF3316-1R0M, SSF45N20A, SSF4N80A
- Table of contents:
Info of SSF3316-1R0M
Info of SSF45N20A
Info of SSF4N80A
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About SSF10N60A
PDF/DataSheet Download
Datasheet: SSF10N60A
File Size: 262714 KB
Manufacturer: Fairchild Semiconductor
Download : Click here to Download
About SSF45N20A
PDF/DataSheet Download
Datasheet: SSF45N20A
File Size: 260400 KB
Manufacturer:
Download : Click here to Download
About SSF4N80AS
PDF/DataSheet Download
Datasheet: SSF4N80AS
File Size: 261140 KB
Manufacturer:
Download : Click here to Download
SSF45N20A Maximum Ratings
|
Symbol |
Characteristic |
Value |
Units |
|
VDSS |
Drain-to-Source Voltage |
200 |
V |
|
ID
|
Continuous Drain Current (TC=25 ) |
26.4 |
A |
|
Continuous Drain Current (TC=100 ) |
16.7 | ||
|
IDM |
Drain Current-Pulsed |
180 |
A |
|
VGS |
Gate-to-Source Voltage |
±30 |
V |
|
EAS |
Single Pulsed Avalanche Energy |
697 |
mJ |
|
IAR |
Avalanche Current |
26.4 |
A |
|
EAR |
Repetitive Avalanche Energy |
10 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt |
5.0 |
V/ns |
|
PD |
Total Power Dissipation (TC=25 ) Linear Derating Factor |
100 0.8 |
W W/ |
|
TJ , TSTG |
Operating Junction and Storage Temperature Range |
- 55 to +150 |
|
|
TL |
Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds |
300 |
SSF45N20A Features
`Avalanche Rugged Technology
`Rugged Gate Oxide Technology
`Lower Input Capacitance
`Improved Gate Charge
`Extended Safe Operating Area
`Lower Leakage Current : 10A (Max.) @ VDS = 200V
`Low RDS(ON) : 0.054 (Typ.)
`Rugged Gate Oxide Technology
`Lower Input Capacitance
`Improved Gate Charge
`Extended Safe Operating Area
`Lower Leakage Current : 10A (Max.) @ VDS = 200V
`Low RDS(ON) : 0.054 (Typ.)
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