MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:INF/SIE D/C:2008+
SPB04N50C3, SPB04N60C2, SPB04N60C3 Datasheet download
Category: Discrete Semiconductor Products
MFG: Infineon Technologies
Package Cooled: INF/SIE
D/C: 2008+
Description: MOSFET N-CH 650V 4.5A D2PAK
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Datasheet: SPB04N50C3
File Size: 299719 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SPB04N60C2
File Size: 168222 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SPB04N60C3
File Size: 311904 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
| Technical/Catalog Information | SPB04N50C3 |
| Vendor | Infineon Technologies (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 560V |
| Current - Continuous Drain (Id) @ 25° C | 4.5A |
| Rds On (Max) @ Id, Vgs | 950 mOhm @ 2.8A, 10V |
| Input Capacitance (Ciss) @ Vds | 470pF @ 25V |
| Power - Max | 50W |
| Packaging | Cut Tape (CT) |
| Gate Charge (Qg) @ Vgs | 22nC @ 10V |
| Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | SPB04N50C3 SPB04N50C3 SPB04N50C3INCT ND SPB04N50C3INCTND SPB04N50C3INCT |
| Parameter | Symbol | Value | Unit | |
| SPP_B | SPA | |||
| Continuous drain current TC = 25 °C TC = 100 °C |
ID | 4.5 2.8 |
4.51) 2.81) |
A |
| Pulsed drain current, tp limited by Tjmax | ID puls | 13.5 | 13.5 | A |
| Avalanche energy, single pulse ID=3.4A, VDD=50V |
EAS | 130 | 130 | mJ |
| Avalanche energy, repetitive tAR limited by Tjmax2) ID=4.5A, VDD=50V |
EAR | 0.4 | 0.4 | |
| Avalanche current, repetitive tAR limited by Tjmax | IAR | 4.5 | 4.5 | A |
| Gate source voltage | VGS | ±20 | ±20 | V |
| Gate source voltage AC (f >1Hz) | VGS | ±30 | ±30 | |
| Power dissipation, TC = 25°C | Ptot | 50 | 31 | W |
| Operating and storage temperature | Tj , Tstg | -55...+150 | °C | |
| Drain Source voltage slope VDS = 400 V, ID = 4.5 A, Tj = 125 °C |
dv/dt | 50 | V/ns | |
| Parameter | Symbol | Value | Unit | |
| SPP_B | SPA | |||
| Continuous drain current TC = 25 °C TC = 100 °C |
ID | 4.5 2.8 |
4.51) 2.81) |
A |
| Pulsed drain current, tp limited by Tjmax | ID puls | 9 | 9 | A |
| Avalanche energy, single pulse ID=3.6A, VDD=50V |
EAS | 130 | 130 | mJ |
| Avalanche energy, repetitive tAR limited by Tjmax2) ID=4.5A, VDD=50V |
EAR | 0.4 | 0.4 | |
| Avalanche current, repetitive tAR limited by Tjmax | IAR | 4.5 | 4.5 | A |
| Reverse diode dv/dt IS = 4.5 A, VDS < VDD, di/dt=100A/s, Tjmax=150°C |
dv/dt | 6 | 6 | V/ns |
| Gate source voltage | VGS | ±20 | ±20 | V |
| Gate source voltage AC (f >1Hz) | VGS | ±30 | ±30 | |
| Power dissipation, TC = 25°C | Ptot | 50 | 31 | W |
| Operating and storage temperature | Tj , Tstg | -55...+150 | °C | |
| Technical/Catalog Information | SPB04N60C3 |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25° C | 4.5A |
| Rds On (Max) @ Id, Vgs | 950 mOhm @ 2.8A, 10V |
| Input Capacitance (Ciss) @ Vds | 490pF @ 25V |
| Power - Max | 50W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 25nC @ 10V |
| Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
| FET Feature | Standard |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | SPB04N60C3 SPB04N60C3 SPB04N60C3INTR ND SPB04N60C3INTRND SPB04N60C3INTR |
| Parameter | Symbol | Value | Unit | |
| SPP_B | SPA | |||
| Continuous drain current TC = 25 °C TC = 100 °C |
ID | 4.5 2.8 |
4.51) 2.81) |
A |
| Pulsed drain current, tp limited by Tjmax | ID puls | 13.5 | 13.5 | A |
| Avalanche energy, single pulse ID=3.4A, VDD=50V |
EAS | 130 | 130 | mJ |
| Avalanche energy, repetitive tAR limited by Tjmax2) ID=4.5A, VDD=50V |
EAR | 0.4 | 0.4 | |
| Avalanche current, repetitive tAR limited by Tjmax | IAR | 4.5 | 4.5 | A |
| Gate source voltage static | VGS | ±20 | ±20 | V |
| Gate source voltage AC (f >1Hz) | VGS | ±30 | ±30 | |
| Power dissipation, TC = 25°C | Ptot | 50 | 31 | W |
| Operating and storage temperature | Tj , Tstg | -55...+150 | °C | |
| Drain Source voltage slope VDS = 480 V, ID = 4.5 A, Tj = 125 °C |
dv/dt | 50 | V/ns | |
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