Position: Home  > All Categories> Integrated Circuits (ICs) > SPB02N60S5

SPB02N60S5

MOSFET COOL MOS N-CH 600V 1.8A

product image

SPB02N60S5 Picture
See larger image
SeekIC No. : 00151859 Detail

SPB02N60S5: MOSFET COOL MOS N-CH 600V 1.8A

SPB02N60S5 Data Sheet

floor Price/Ceiling Price

US $ .39~.6 / Piece | Get Latest Price
Part Number:
SPB02N60S5
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $.6
  • $.53
  • $.43
  • $.39
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/8

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 1.8 A
Resistance Drain-Source RDS (on) : 3 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-263 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 600 V
Package / Case : TO-263
Continuous Drain Current : 1.8 A
Resistance Drain-Source RDS (on) : 3 Ohms


Features:

• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance


Specifications

Parameter Symbol Value Unit
Continuous drain current
TC = 25 °C
TC = 100 °C		 ID 1.8
1.1		 A
Pulsed drain current, tp limited by Tjmax ID puls 3.2
Avalanche energy, single pulse
ID=1.35A, VDD=50V		 EAS 50 mJ
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=1.8A, VDD=50V		 EAR 0.07
Avalanche current, repetitive tAR limited by Tjmax IAR 1.8 A
Gate source voltage VGS ±20 V
Gate source voltage AC (f >1Hz) VGS ±30
Power dissipation, TC = 25°C Ptot 25 W
Operating and storage temperature Tj , Tstg -55...+150 °C
Drain Source voltage slope
VDS = 480 V, ID = 1.8 A, Tj = 125 °C		 dv/dt 20 V/ns



Parameters:

Technical/Catalog InformationSPB02N60S5
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C1.8A
Rds On (Max) @ Id, Vgs3 Ohm @ 1.1A, 10V
Input Capacitance (Ciss) @ Vds 240pF @ 25V
Power - Max25W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs9.5nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names SPB02N60S5
SPB02N60S5
SPB02N60S5INTR ND
SPB02N60S5INTRND
SPB02N60S5INTR



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Computers, Office - Components, Accessories
DS-4008HCI
LB104V03(A1)
Hardware, Fasteners, Accessories
MF-A02
LMS700KF07
Semiconductor Modules
2DI300A-050-03
7MBR25SA-120-50
Capacitors
GRM188R71H103KA01D
GRM21BR71H104KA01L
Optoelectronics
SFH7770
TLP423J
Tapes, Adhesives
803
AC452-2
View more