MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:INF/SIE D/C:08+
SPB03N60C3, SPB03N60S5, SPB03N60S5E3045A Datasheet download
Category: Discrete Semiconductor Products
MFG: Infineon Technologies
Package Cooled: INF/SIE
D/C: 08+
Description: MOSFET N-CH 600V 3.2A TO-263
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PDF/DataSheet Download
Datasheet: SPB03N60C3
File Size: 315633 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SPB03N60S5
File Size: 315818 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SPB02N60
File Size: 121401 KB
Manufacturer: Siemens Semiconductor Group
Download : Click here to Download
| Technical/Catalog Information | SPB03N60C3 |
| Vendor | Infineon Technologies (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25° C | 3.2A |
| Rds On (Max) @ Id, Vgs | 1.4 Ohm @ 2A, 10V |
| Input Capacitance (Ciss) @ Vds | 400pF @ 25V |
| Power - Max | 38W |
| Packaging | Digi-Reel? |
| Gate Charge (Qg) @ Vgs | 17nC @ 10V |
| Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | SPB03N60C3 SPB03N60C3 SPB03N60C3INDKR ND SPB03N60C3INDKRND SPB03N60C3INDKR |
| Parameter | Symbol | Value | Unit | |
| SPP_B | SPA | |||
| Continuous drain current TC = 25 °C TC = 100 °C |
ID | 2 3.2 |
3.21) 21) |
A |
| Pulsed drain current, tp limited by Tjmax | ID puls | 9.6 | 9.6 | A |
| Avalanche energy, single pulse ID=2.4A, VDD=50V |
EAS | 100 | 100 | mJ |
| Avalanche energy, repetitive tAR limited by Tjmax2) ID=3.2A, VDD=50V |
EAR | 0.2 | 0.2 | |
| Avalanche current, repetitive tAR limited by Tjmax | IAR | 3.2 | 3.2 | A |
| Gate source voltage static | VGS | ±20 | ±20 | V |
| Gate source voltage AC (f >1Hz) | VGS | ±30 | ±30 | |
| Power dissipation, TC = 25°C | Ptot | 38 | 29.7 | W |
| Operating and storage temperature | Tj , Tstg | -55...+150 | °C | |
| Drain Source voltage slope VDS = 480 V, ID = 3.2 A, Tj = 125 °C |
dv/dt | 50 | V/ns | |
| Technical/Catalog Information | SPB03N60S5 |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25° C | 3.2A |
| Rds On (Max) @ Id, Vgs | 1.4 Ohm @ 2A, 10V |
| Input Capacitance (Ciss) @ Vds | 420pF @ 25V |
| Power - Max | 38W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 16nC @ 10V |
| Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | SPB03N60S5 SPB03N60S5 SPB03N60S5INTR ND SPB03N60S5INTRND SPB03N60S5INTR |
| Parameter | Symbol | Value | Unit |
| Continuous drain current TC = 25 °C TC = 100 °C |
ID | 1.8 1.1 |
A |
| Pulsed drain current, tp limited by Tjmax | ID puls | 3.2 | |
| Avalanche energy, single pulse ID=1.35A, VDD=50V |
EAS | 50 | mJ |
| Avalanche energy, repetitive tAR limited by Tjmax2) ID=1.8A, VDD=50V |
EAR | 0.07 | |
| Avalanche current, repetitive tAR limited by Tjmax | IAR | 1.8 | A |
| Gate source voltage | VGS | ±20 | V |
| Gate source voltage AC (f >1Hz) | VGS | ±30 | |
| Power dissipation, TC = 25°C | Ptot | 25 | W |
| Operating and storage temperature | Tj , Tstg | -55...+150 | °C |
| Drain Source voltage slope VDS = 480 V, ID = 1.8 A, Tj = 125 °C |
dv/dt | 20 | V/ns |
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