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SKW15N120, SKW15N60, SKW20N60

Table of contents:
Info of SKW15N120
Info of SKW15N60
Info of SKW20N60

SKW15N120, SKW15N60, SKW20N60 Selling Leads, Datasheet

MFG:INFINEON Package Cooled:P-TO247-3-1 D/C:2008+

SKW15N120, SKW15N60, SKW20N60 Datasheet download

Five Points

Part Number: SKW15N120

MFG: INFINEON

Package Cooled: P-TO247-3-1

D/C: 2008+

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SKW15N120 General Description

The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer.

SKW15N120 Maximum Ratings

Parameter	Symbol	Value	Unit
Collector-emitter voltage	VCE	1200	V
DC collector current TC = 25°C TC = 100°C	IC	30 15	A
Pulsed collector current, tp limited by Tjmax	ICpuls	52
Turn off safe operating area VCE 1200V, Tj 150°C	-	52
Diode forward current TC = 25°C TC = 100°C	IF	32 15
Diode pulsed current, tp limited by Tjmax	IFpuls	50
Gate-emitter voltage	VGE	±20	V
Short circuit withstand time1) VGE = 15V, 100V VCC 1200V, Tj 150°C	tSC	10	S
Power dissipation TC = 25°C	Ptot	198	W
Operating junction and storage temperature	Tj , Tstg	-55to+150	°C
Soldering temperature, 1.6mm (0.063 in.) from case for 10s	-	260	°C

SKW15N120 Features

• 40lower Eoff compared to previous generation
• Short circuit withstand time 10 µs
• Designed for:
- Motor controls
- Inverter
- SMPS
• NPT-Technology offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
• Complete product spectrum and PSpice Models : http://www.infineon.com

SKW15N60 Maximum Ratings

Parameter	Symbol	Value	Unit
Collector-emitter voltage	V_CE	600	V
DC collector current T_C = 25°C T_C = 100°C	I_C	31 15	A
Pulsed collector current, tp limited by Tjmax	I_Cpuls	62
Turn off safe operating area V_CE 600V, T_j 150°C		62
Diode forward current T_C = 25°C T_C = 100°C	I_F	31 15
Diode pulsed current, tp limited by Tjmax	I_Fpuls	62
Gate-emitter voltage	V_GE	±20	V
Short circuit withstand time1) V_GE = 15V, V_CC 600V, T_j 150°C	t_SC	10	s
Power dissipation T_C= 25°C	P_tot	139	W
Operating junction and storage temperature	T_j , T_stg	-55...+150	°C

SKW20N60 General Description

SKW20N60 Maximum Ratings

Parameter	Symbol	Value	Unit
Collector-emitter voltage	VCE	600	V
DC collector current TC = 25°C TC = 100°C	IC	40 20	A
Pulsed collector current, tp limited by Tjmax	ICpuls	80
Turn off safe operating area VCE 1200V, Tj 150°C	-	80
Diode forward current TC = 25°C TC = 100°C	IF	40 20
Diode pulsed current, tp limited by Tjmax	IFpuls	80
Gate-emitter voltage	VGE	±20	V
Short circuit withstand time1) VGE = 15V, 100V VCC 1200V, Tj 150°C	tSC	10	S
Power dissipation TC = 25°C	Ptot	179	W
Operating junction and storage temperature	Tj , Tstg	-55to+150	°C

SKW20N60 Features

• 75% lower Eoff compared to previous generation combined with low conduction losses
• Short circuit withstand time 10 µs
• Designed for:
- Motor controls
- Inverter
• NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
• Very soft, fast recovery anti-parallel EmCon diode

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