SKW10N60A

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : TO-247-3


Features:

• 75% lower Eoff compared to previous generation combined with low conduction losses
• Short circuit withstand time 10 µs
• Designed for:
- Motor controls
- Inverter
• NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
• Very soft, fast recovery anti-parallel EmCon diode
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt


Specifications

Parameter	Symbol	Value	Unit
		SKP10N60A SKB10N60A SKW10N60A
Collector-emitter voltage	VCE	600	V
DC collector current TC = 25°C TC = 100°C	IC	20 10.6	A
Pulsed collector current, tp limited by Tjmax	ICpuls	40	A
Turn off safe operating area VCE 600V, Tj 150°C	-	40	A
Diode forward current TC = 25°C TC = 100°C	IF	21 10	A
Diode pulsed current, tp limited by Tjmax	IFpuls	42	A
Gate-emitter voltage	VGE	±20	V
Short circuit withstand time1) VGE = 15V, VCC 600V, Tj 150°C	tSC	10	µs
Power dissipation TC = 25°C	Ptot	92	W
Operating junction and storage temperature	Tj , Tstg	-55to+150	°C

Description

The information herein of SKW10N60A is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer.