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SKW10N60

IGBT Transistors FAST IGBT NPT TECH 600V 10A

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SeekIC No. : 00143852 Detail

SKW10N60: IGBT Transistors FAST IGBT NPT TECH 600V 10A

SKW10N60 Data Sheet

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Part Number:
SKW10N60
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/28

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Maximum Gate Emitter Voltage : +/- 20 V Maximum Operating Temperature : + 150 C
Package / Case : TO-247-3 Packaging : Tube    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : TO-247-3


Features:

• 75% lower Eoff compared to previous generation combined with low conduction losses
• Short circuit withstand time 10 s
• Designed for:
- Motor controls
- Inverter
• NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
• Very soft, fast recovery anti-parallel EmCon diode


Specifications

Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCE
600
V
DC collector current
TC = 25°C
TC = 100°C
IC
21
10.9
A
Pulsed collector current, tp limited by Tjmax
ICpuls
42
Turn off safe operating area
VCE 600V, Tj 150°C
-
42
Diode forward current
TC = 25°C
TC = 100°C
IF
21
10
Diode pulsed current, tp limited by Tjmax
IFpuls
42
Gate-emitter voltage
VGE
±20
V
Short circuit withstand time1)
VGE = 15V, VCC 600V, Tj 150°C
tSC
10
s
Power dissipation
TC = 25°C
Ptot
104
W
Operating junction and storage temperature
Tj,Tstg
-55...+150
°C
1) Allowed number of short circuits: <1000; time between short circuits: >1s.


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