SKW20N60

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : TO-247-3


Features:

• 75% lower Eoff compared to previous generation combined with low conduction losses
• Short circuit withstand time 10 µs
• Designed for:
- Motor controls
- Inverter
• NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
• Very soft, fast recovery anti-parallel EmCon diode


Specifications

Parameter	Symbol	Value	Unit
Collector-emitter voltage	VCE	600	V
DC collector current TC = 25°C TC = 100°C	IC	40 20	A
Pulsed collector current, tp limited by Tjmax	ICpuls	80
Turn off safe operating area VCE 1200V, Tj 150°C	-	80
Diode forward current TC = 25°C TC = 100°C	IF	40 20
Diode pulsed current, tp limited by Tjmax	IFpuls	80
Gate-emitter voltage	VGE	±20	V
Short circuit withstand time1) VGE = 15V, 100V VCC 1200V, Tj 150°C	tSC	10	S
Power dissipation TC = 25°C	Ptot	179	W
Operating junction and storage temperature	Tj , Tstg	-55to+150	°C

Description

The information herein of SKW20N60 is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer.