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SKW20N60HS

IGBT Transistors HIGH SPEED NPT TECH 600V 20A

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SeekIC No. : 00142843 Detail

SKW20N60HS: IGBT Transistors HIGH SPEED NPT TECH 600V 20A

SKW20N60HS Data Sheet

floor Price/Ceiling Price

US $ 2.21~3.35 / Piece | Get Latest Price
Part Number:
SKW20N60HS
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $3.35
  • $2.99
  • $2.45
  • $2.21
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/28

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Maximum Gate Emitter Voltage : +/- 20 V Maximum Operating Temperature : + 150 C
Package / Case : TO-247-3 Packaging : Tube    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : TO-247-3


Features:

• 30% lower Eoff compared to previous generation
• Short circuit withstand time – 10 s
• Designed for operation above 30 kHz
• NPT-Technology for 600V applications offers:
- parallel switching capability
- moderate Eoff increase with temperature
- very tight parameter distribution
• High ruggedness, temperature stable behaviour
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1 for target applications
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/


Specifications

Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCE
600
V
DC collector current
TC = 25°C
TC = 100°C
IC
36
20
A
Pulsed collector current, tp limited by Tjmax
ICpuls
80
Turn off safe operating area
VCE 600V, Tj 150°C
-
80
Diode forward current
TC = 25°C
TC = 100°C
IF
40
20
Diode pulsed current, tp limited by Tjmax
IFpuls
80
Gate-emitter voltage
VGE
±20
±30
V
Short circuit withstand time1)
VGE = 15V, VCC 600V, Tj 150°C
tSC
10
s
Power dissipation
TC = 25°C
Ptot
178
W
Operating junction and storage temperature
Tj,Tstg
-55~+150
°C
Time limited operating junction temperature for t < 150h
Tj(tl)
175
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
-
260
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.


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