IGBT Transistors FAST IGBT NPT TECH 1200V 25A
SKW25N120: IGBT Transistors FAST IGBT NPT TECH 1200V 25A
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Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 1200 V | ||
Maximum Gate Emitter Voltage : | +/- 20 V | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | TO-247-3 | Packaging : | Tube |
Parameter |
Symbol |
Value |
Unit |
Collector-emitter voltage |
VCE |
1200 |
V |
DC collector current TC = 25°C TC = 100°C |
IC |
46 25 |
A
|
Pulsed collector current, tp limited by Tjmax |
ICpuls |
84 | |
Turn off safe operating area VCE 600V, Tj 150°C |
- |
84 | |
Diode forward current TC = 25°C TC = 100°C |
IF |
42 25 | |
Diode pulsed current, tp limited by Tjmax |
IFpuls |
80 | |
Gate-emitter voltage |
VGE |
±20 |
V |
Short circuit withstand time1) VGE = 15V, VCC 600V, Tj 150°C |
tSC |
10 |
s |
Power dissipation TC = 25°C |
Ptot |
313 |
W |
Operating junction and storage temperature |
Tj,Tstg |
-55~+150 |
°C |
Soldering temperature, 1.6mm (0.063 in.) from case for 10s |
Ts |
260 |