SKW07N120

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector- Emitter Voltage VCEO Max : 1200 V
Package / Case : TO-247-3


Features:

• 40lower Eoff compared to previous generation
• Short circuit withstand time 10 µs
• Designed for:
- Motor controls
- Inverter
- SMPS
• NPT-Technology offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
• Complete product spectrum and PSpice Models : http://www.infineon.com


Specifications

Parameter	Symbol	Value	Unit
Collector-emitter voltage	VCE	1200	V
DC collector current TC = 25°C TC = 100°C	IC	16.5 7.9	A
Pulsed collector current, tp limited by Tjmax	ICpuls	27
Turn off safe operating area VCE 1200V, Tj 150°C	-	27
Diode forward current TC = 25°C TC = 100°C	IF	13 7
Diode pulsed current, tp limited by Tjmax	IFpuls	27
Gate-emitter voltage	VGE	±20	V
Short circuit withstand time1) VGE = 15V, 100V VCC 1200V, Tj 150°C	tSC	10	S
Power dissipation TC = 25°C	Ptot	125	W
Operating junction and storage temperature	Tj , Tstg	-55to+150	°C
Soldering temperature, 1.6mm (0.063 in.) from case for 10s	-	260

Description

The information herein of SKW07N120 is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer.