SI7119DN-T1-E3, SI7120ADN, SI7120DN Selling Leads, Datasheet
MFG:VISHAY Package Cooled:SON-8 D/C:0741+
SI7119DN-T1-E3, SI7120ADN, SI7120DN Datasheet download
Part Number: SI7119DN-T1-E3
MFG: VISHAY
Package Cooled: SON-8
D/C: 0741+
SI7119DN-T1-E3, SI7120ADN, SI7120DN
- Table of contents:
Info of SI7119DN-T1-E3
Info of SI7120ADN
Info of SI7120DN
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About SI7116DN
PDF/DataSheet Download
Datasheet: SI7116DN
File Size: 80286 KB
Manufacturer: VISAY [Vishay Siliconix]
Download : Click here to Download
About SI7116DN
PDF/DataSheet Download
Datasheet: SI7116DN
File Size: 80286 KB
Manufacturer: VISAY [Vishay Siliconix]
Download : Click here to Download
About Si7120DN
PDF/DataSheet Download
Datasheet: Si7120DN
File Size: 69261 KB
Manufacturer: VISAY [Vishay Siliconix]
Download : Click here to Download
SI7120DN General Description
N-Channel 60-V (D-S) MOSFET
SI7120DN Maximum Ratings
| Parameter | Symbol | 10 secs | Steady State | Unit | |
| Drain-Source Voltage | VDS | 60 | V | ||
| Gate-Source Voltage | VGS | ±20 | |||
| Continuous Drain Current (TJ = 150)a | TA = 25 | ID | 10 | 6.3 | A |
| TA = 70 | 8.0 | 5.1 | |||
| Pulsed Drain Current | IDM | 40 | |||
| Continuous Source Current (Diode Conduction)a | IS | 3.2 | 1.3 | ||
| Single Avalanche Current | L = 0.1 mH | IAS | 22 | ||
| Single Avalanche Energy | EAS | 24 | mJ | ||
| Maximum Power Dissipationa | TA = 25 | PD | 3.8 | 1.5 | W |
| TA = 70 | 2.4 | 1.0 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | /W | ||
SI7120DN Features
· TrenchFET® Power MOSFET
·New Low Thermal Resistance
· PowerPAK® 1212-8 Package with
Low 1.07-mm Profile
· 100% Rg Tested
·New Low Thermal Resistance
· PowerPAK® 1212-8 Package with
Low 1.07-mm Profile
· 100% Rg Tested
SI7120DN Typical Application
· Primary Side Switch
· Synchronous Rectification
· Synchronous Rectification
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