Features: · TrenchFET® Power MOSFET· New Low Thermal ResistancePowerPAK® Package with Low1.07-mm Profile· PWM Optimized·100% Rg TestedApplication· Synchronous Rectification· Intermediate Switch· Synchronous BuckSpecifications Parameter Symbol 10 secs Steady State Unit Drain-Sou...
Si7116DN: Features: · TrenchFET® Power MOSFET· New Low Thermal ResistancePowerPAK® Package with Low1.07-mm Profile· PWM Optimized·100% Rg TestedApplication· Synchronous Rectification· Intermediate Swi...
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Parameter | Symbol | 10 secs | Steady State | Unit | |
Drain-Source Voltage | VDS | 40 | V | ||
Gate-Source Voltage | VGS | ±20 | |||
Continuous Drain Current (TJ = 150)a | TA = 25 | ID | 16.4 | 10.5 | A |
TA = 70 | 13.1 | 8.4 | |||
Pulsed Drain Current | IDM | 60 | |||
Continuous Source Current (Diode Conduction)a | IS | 3.2 | 1.3 | ||
Single Avalanche Current | L = 0.1 mH | IAS | 15 | ||
Single Avalanche Energy | EAS | 11 | mJ | ||
Maximum Power Dissipationa | TA = 25 | PD | 3.8 | 1.5 | W |
TA = 70 | 2.0 | 0.8 | |||
Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | /W |