SI7100DN-T1-GE3, US $ .53-.64 , Vishay/Siliconix, SI7100DN-T1-GE3 DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00157409 Detail

SI7100DN-T1-GE3: MOSFET 8.0V 35A 52W 3.5mohm @ 4.5V

SI7100DN-T1-GE3 Data Sheet

US $ .53~.64 / Piece | Get Latest Price

Part Number:: SI7100DN-T1-GE3
Mfg:: Vishay/Siliconix
Supply Ability:: 5000

Price Break

Qty
0~1650
1650~3000
3000~6000

Unit Price
$.64
$.55
$.53

Processing time
15 Days
15 Days
15 Days

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Upload time: 2024/12/26

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SI7100DN-T1-E3 evaluate
US $.46 - .5 / Piece

MOSFET 8.0V 35A 52W 3.5mohm @ 4.5V
SI7102DN evaluate
DescriptionN-Channel 12-V (D-S) MOSFET The SI7102DN is designed as one kind of dual N-channel 12-...
SI7102DN-T1-E3 evaluate
US $.5 - .55 / Piece

MOSFET 12V 35A 52W

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	8 V
Gate-Source Breakdown Voltage :	+/- 8 V	Continuous Drain Current :	26.1 A
Resistance Drain-Source RDS (on) :	3.5 mOhms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	PowerPAK 1212-8	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 8 V
Drain-Source Breakdown Voltage : 8 V
Package / Case : PowerPAK 1212-8
Resistance Drain-Source RDS (on) : 3.5 mOhms
Continuous Drain Current : 26.1 A

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SI7100DN-T1-GE3

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